摘要：
The thesis investigated two low temperature processing methods: Applying deep ultra-violet (DUV) radiation during the sol-gel deposition of Bi3NbO7 (BNO) thin films to facilitate carbon removal, and the cold sintering process (CSP) of Pb(Zr, Ti)O3 (PZT) powder/tape.A DUV treatment between the drying and pyrolyzing steps during sol-gel deposition can effectively eliminate the residual carbon in BNO thin films at < 350 °C, which decreases the porosity, and improves the energy storage densities of the BNO capacitors. As a result, the BNO thin film, when annealed between 350-450 °C, presented energy storage densities of 13-39 J/cm3, which is comparable with many thin films crystallized at 700 °C. Furthermore, by suppressing the maximum heat treatment temperature, high performance thin film capacitors can be directly deposited on the polymer/metal substrates. This will shorten the processing flow of flexible electronics and can be beneficial to the production of wearable *** cold sintering process was also employed in order to densify lead zirconate titanate, one of the most widely used piezoelectric materials. The CSP often utilizes a water-based transient liquid phase to either partially dissolve the ceramic powder, creating a liquid phase sintering (LPS) condition; or lubricate the powder to enhance the compaction. Because it is difficult to dissolve PZT powder, moistened Pb(NO3)2 was mixed with PZT to help packing the PZT powder to a relative density over 80% during cold sintering at 300 °C, 500 MPa. The Pb(NO3)2 also decomposes into PbO, which helps to liquid phase sinter the PZT when the cold sintered samples were post-annealed at 700-900 °C. The 900 °C post-annealed PZT showed a relative density ~99% with a room-temperature relative permittivity over 1300 and a d33 ~200 pC/N. Further study also suggested the cold sintering of PZT/Pb(NO3)2 obeys a viscous sintering model, which differs from the cold sintering mechanisms reported for many other ***
