关键词:
化学机械抛光
氧化铈纳米颗粒
悬浮稳定性
N-乙酰-D-脯氨酸
表面改性
摘要:
随着半导体行业的快速发展,对可使其全局平坦化的化学机械抛光(CMP)技术提出更高的要求。因此,发明一种更安全、更稳定、更高效且更环保的氧化铈抛光液迫在眉睫。本研究通过溶剂水热法,利用N-乙酰-D-脯氨酸(ADPO)对氧化铈纳米磨料进行表面改性,使用XRD、热重分析、N2吸附–脱附、DLS、TEM等多种手段对改性前后的氧化铈纳米颗粒分析对比。研究表明,改性后的氧化铈悬浮液可稳定悬浮30天以上。本研究探讨了改性前后氧化铈纳米磨料的CMP性能,采用膜厚测量仪测量改性前后纳米磨料的材料去除率,发现表面改性可使氧化铈纳米磨料的材料去除率降低14%。借助原子力显微镜对CMP后的晶圆表面质量进行表征计算,改性前氧化铈纳米磨料抛光的Ra和Rq值分别为0.240 nm、0.329 nm,改性后氧化铈纳米磨料抛光的Ra和Rq值分别为0.186 nm、0.236 nm,表面质量获得了显著提高。With the rapid development of the semiconductor industry, it is inevitable that higher requirements for chemical mechanical polishing (CMP) technology will be put forward, which can make it globally flat. Therefore, it is urgent to invent safer, more stable, more efficient, and more environmentally friendly cerium oxide polishing slurries. In this study, the surface modification of cerium oxide nanoparticles was carried out using N-Acetyl-D-Proline (ADPO) using a solvent hydrothermal method. The cerium oxide nanoparticles before and after modification were analyzed and compared using XRD, thermogravimetric analysis, N2 adsorption-desorption, DLS, TEM, and other means. The results show that the modified cerium oxide suspension can be stably suspended for more than 30 days. In this study, the CMP properties of cerium oxide nano-abrasive before and after modification were investigated. The material removal rate of cerium oxide nano-abrasive before and after modification was measured by using a film thickness measuring instrument. It was found that the material removal rate of cerium oxide nano-abrasive was reduced by 14% by surface modification. The surface quality of the wafer after CMP was characterized and calculated by atomic force microscopy. The Ra and Rq values of ceria nano-abrasives polishing before modification were 0.240 nm and 0.329 nm, respectively, and the Ra and Rq values of ceria nano-abrasives polishing after modification were 0.186 nm and 0.236 nm, respectively, which significantly improved the surface quality.