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关键词： Class E circuit   parasitic capacitors   soft switching   zero voltage switching (ZVS)  

摘要： This paper explores the diverse applications of Silicon Metal-Oxide-Semiconductor Field-Effect Transistor (Si MOSFET) power switch devices in Class E circuit switching. Class E circuit is known for their exceptional efficiency and adaptability across a wide range of applications. However, the performance of Class E circuit can be significantly affected by parasitic components, particularly parasitic capacitors, which play a crucial role in the operation of the converter. This is because parasitic capacitors in Si MOSFET have the potential to increase switching losses in the power converter circuit by storing and releasing energy during switching transitions and can limit the speed of MOSFET switching. The study has determined that IRF510 combined with the TC 4422 driver achieves an efficiency of 98.21%, making it the most suitable switching device for high-frequency Class E circuit. Therefore, achieving Zero Voltage Switching (ZVS) of a Class E circuit is attainable by carefully selecting the appropriate power switch device and considering the value of parasitic capacitances to mitigate voltage spikes and ringing effects. © 2025, Semarak Ilmu Publishing. All rights reserved.

关键词： Transistors   Nanoscale devices   MOSFET   Semiconductor device measurement   Optical variables measurement   Optical devices   Logic gates   Quantum measurements   COMSOL multiphysics   geometry workaround   indirect band gap overcoming   inter-sub-band transitions (ISBT)   nanophotonic and nanoelectronic silicon devices  

摘要： The fabrication of nanoelectronic and nanophotonic devices based on embedded quantum structures has become feasible over the last decades, and the field is continuously improving. Quantum measurements describing evolving configurations are required as part of the optical characterization and performances study of these devices. To ensure accuracy, it is necessary to determine a reliable evaluation of the expected quantum effects relevant to both stationary and time-dependent measurements. Based on a case study of a quantum well embedded in a nanoelectronic MOSFET device as the gate-recessed channel (GRC), a set of possible quantum measurements that can serve as a basis to similar applications of the rules on additional devices is presented and analyzed.

关键词： BioFETD   Biomolecules detector   InAs channel   MOSFET   Nanotube   TCAD   Surrounding gate   Threshold voltage  

摘要： This paper investigates the applicability of an Indium Arsenide (InAs) channel-based cylindrical BioFETD for label-free biosensing applications. The adoption of InAs as an alternative channel material in the BioFETD has revealed a 153.38 % and 179.23 % enhancement in sensitivity for Streptavidin and Gelatin detection compared to its conventional counterpart. The investigation into its sensitivity is bolstered by the consideration of multiple metrics, thereby enhancing the reliability of the conclusions drawn. Temperature variations and practical constraints on sensitivity metrics have been taken into account, providing a comprehensive perspective. To establish a benchmark for comparison, the proposed biosensor undergoes evaluation against existing literature, particularly focusing on their sensitivity to confirm their effectiveness. Furthermore, the proposed BioFETD demonstrates notable improvements, with a 139.942 mV (similar to 122 %) increase in threshold voltage sensitivity over its junctionless variant for Gelatin. Biomolecules localized inside the oxide layer within the embedded cavity affects various electrostatic properties across the device channel, including drain current, surface potential, electric field and threshold voltage. A compact analytical model, based on fundamental physics, has been proposed and shows excellent agreement with the obtained simulated results. The 2D Poisson equation accurately models these properties, with changes in drain current and threshold voltage serving as prime indicators in biomolecule detection. The obtained results make the Si/InAs interfaced BioFETD a perfect candidate for ultra-sensitive detectors.

关键词： 高功率半导体激光器   热管理   金刚石薄膜  

摘要： 高功率半导体激光器因其独特的性能优势在工业加工、医疗和通信等领域得到越来越广泛的应用。然而,高功率激光器在工作过程中产生的大量热量成为制约其性能提升和可靠性的关键瓶颈。传统的热沉材料和封装结构已难以满足高功率器件的散热需求。本文针对高功率半导体激光器热管理难题,提出采用金刚石薄膜作为新型热沉材料的创新方案。在分析高功率激光器热特性和散热挑战的基础上,从热沉材料、界面热阻、结构设计、集成工艺等方面系统开展金刚石膜热沉的研究,构建热⁃力多场耦合分析模型,优化热沉结构参数。通过散热性能测试、功率及光束质量表征评估金刚石膜热沉对器件性能的提升作用,并进行长期可靠性验证。

关键词： 先进控制策略   有源电力滤波器   性能优化  

摘要： 有源电力滤波器的控制方式对其补偿效果具有决定性影响,并直接决定其应用领域。本项目以有源功率滤波器为研究对象,旨在通过采用先进的控制方法对其进行优化设计。鉴于电网中谐波问题日益严重,有源电力滤波技术作为一种有效的谐波控制手段,其性能优化显得尤为重要。本文深入阐述有源功率滤波技术的理论基础和类型,并对该领域中各种新型控制方法进行深入研究,以期提升有源电力滤波器(APF)在谐波治理和无功功率补偿方面的性能。

关键词： 电表数据采集成功率   电力营销效率   智能电网   数据质量  

摘要： 随着智能电网建设的不断深入,电表数据采集成功率成为衡量电力营销效率的重要指标之一,因此分析电表数据采集成功率对电力营销效率的影响具有显著的现实意义。本研究通过实际应用案例,分析了影响电表数据采集成功率的因素,提出了相应的提升策略,同时验证了提高电表数据采集成功率对优化电力营销流程、降低运营成本、提升客户满意度等方面的积极作用。研究表明,加强电表数据采集管理,提升数据采集成功率,对推动电力营销效率的提升具有重要意义。

关键词： 输配电系统   变压器散热   优化措施  

摘要： 随着电力需求的不断增长,输配电系统中变压器运行的稳定性和可靠性越发重要。其中,变压器的散热问题是影响其性能和寿命的关键因素之一。本文分析了变压器散热的重要性,变压器散热的基本原理,重点阐述了变压器散热的优化措施,希望能够对我国电力系统的发展提供有价值的参考。

关键词： Silicon carbide  

摘要： In this article, a double polysilicon/SiC heterojunction diode (HJD) integrated SiC trench MOSFET (DHJD-TMOS) featuring an ohmic contact mesa is firstly proposed and investigated. The proposed device enables reverse current flow when the applied reverse voltage is lower than the turn-on voltage of the polysilicon/SiC HJD, achieved through precise control of the electron barrier height by optimizing the ohmic mesa width. The device architecture incorporates two key shielding features: a deep p + shield layer beneath the gate oxide and p + rings under the HJD source trenches, which collectively provide dual protection for the HJD region against high electric fields during blocking state, effectively suppressing leakage current. Comprehensive simulation results demonstrate significant performance improvements of the proposed DHJD-TMOS, including a 32 % reduction in reverse cut-in voltage and a 62 % decrease in total switching loss compared to conventional JBS-integrated MOSFETs. The high frequency figure of merits (HF-FOM) achieves an outstanding value of 64.07 mΩ⋅pF. These demonstrated device performances, as well as the good fabrication compatibility and process tolerance, making our proposed device highly attractive in future high frequency and high voltage applications. © 2025 Elsevier Ltd

关键词： Temperature measurement   Silicon carbide   MOSFET   Temperature sensors   Sensitivity   Threshold voltage   Logic gates   Accuracy   Circuits   Voltage measurement   Junction temperature sensing   power conversion   power semiconductor   reliability   silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET)  

摘要： Accurate online junction temperature (T-j) extraction is crucial to power mosfets' reliability and health management. However, most temperature-sensitive electrical parameters in silicon carbide (SiC) power mosfets exhibit relatively low temperature sensitivity, which limits extracting accuracy and increases the bandwidth requirements of measurement circuits. To address these challenges, this article proposes a high-sensitive online (T-j) extracting method, called linear-mode current response (LMCR). A theoretical formula is proposed for the first time to reveal the electrothermal characteristics of the drain current in linear mode. Then, technology computer aided design (TCAD) simulations and experimental results verify its high sensitivity to (T-j) and controllability. To apply for (T-j) extraction, this article details the implementation of the LMCR-based (T-j) extracting unit and strategy. By injecting a narrow current pulse into the device, the (T-j) can be determined from the LMCR. Calibrations using double pulse test are introduced and demonstrate the method's advantages, including high (T-j) sensitivity, spontaneous injection, minimal additional losses, and low dependence on load current and bus voltage. Finally, the effectiveness of the proposed method is further validated through experiments with a SiC power boost converter. The results show that narrow pulse injection does not affect the load or other components, and this method provides high measurement sensitivity, low invasive interference, and eliminates the need for high-bandwidth circuits.

关键词： Switches   Inductors   Transmission line measurements   MOSFET   Propagation losses   Iron   Power transmission   Bridge circuits   Phase modulation   Control systems   Burst mode   dual active bridge converter   light-load efficiency improvement  

摘要： This article introduces a method to enhance the light load efficiency of dual active bridge converters through power loss minimization via optimal switching sequences. Peak efficiency points for various operational conditions are identified using a comprehensive power loss calculation approach. Single phase shift modulation and trapezoidal current modulation modes are utilized, and an iterative algorithm determines the optimal switching sequence for the first, repeating, and final switching pulses under a given peak inductor current in various operating condition. The comprehensive state machine diagram of the proposed control method demonstrates seamless integration of both continuous and burst modes for efficiency improvement. Experimental waveforms, efficiency curves, and power loss breakdown diagrams from a 1 kW prototype demonstrate that the proposed method significantly outperforms continuous operation mode, as well as conventional and advanced burst modes, increasing light load efficiency from below 60% to above 85%.