关键词:
Thermal effects
Ballistic transport
Drift-diffusion
Time delay
Thermoelectric transport
摘要:
With the size down and integration of power devices, the internal thermal management problem has become particularly severe. Especially in the channel region, significant heat generation can lead to a rapid increase in device temperature, which not only exacerbates the degradation of electrical performance in the channel region but also poses a severe threat to the overall reliability and stability. The drift-diffusion (D-D) transport method is employed to calculate the dynamic heat generation of n-MOSFET power devices, and the effects of size and electrical parameters on the thermal production mechanism are analyzed. Considering the quasi-ballistic effect of carrier transport in nanoscale devices, the ballistic diffusion equation (BDE) is introduced to calculate the heat transfer characteristics, and the temperature distribution is explored. The results show that, under a given input voltage, the heat accumulation due to short-channel effects becomes more pronounced with the Kn increase, forming high-temperature hotspots between the gate and drain. When the scale shrinks further ( Kn = 5 and Kn = 10), energy accumulation will occur between the gate and source, increasing temperature rise. At smaller scales, the thermal production on each side of the gate increases with the rise of the conduction voltage, especially under the working condition of Kn = 10, V g = V d = 1.0 V. Moreover, heat production and temperature transfer have a significant time delay. Specifically, it takes 15 fs for heat generation to reach a stable state, while the stable transfer of heat takes 12 ps.