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关键词： 光伏发电预测   时序卷积网络   Transformer   确定性预测   概率预测  

摘要： 提出了一种基于时序卷积网络(TCN)和Transformer结合的短期光伏发电功率预测方法。分析了风速、雨量、太阳辐照度、云量等影响光伏发电功率的主要因素;利用TCN提取序列的全局空间特征并采用Transformer提取序列中的长期依赖关系的时序特征,提出TCN-Transformer复合模型以实现高精度的光伏功率预测,并将其应用于光伏发电的确定性预测与概率预测中;通过澳大利亚沙漠知识太阳能中心(DKASC)数据集进行仿真分析。结果表明,改进后的TCN-Transformer模型在不同天气条件下均表现出优异的预测性能,有效提高了光伏功率的短期预测精度。

关键词： 电力电子固态变压器   功率均分控制   电能  

摘要： 针对一种可接入分布式新能源发电系统的模块级联型三端口单相电力电子固态变压器电路拓扑,提出了一种功率/潮流均分控制策略,实现了高压电网侧端口、低压交流用户侧端口及400V直流侧端口三者之间电能双向自由流动,并且优先使用分布式新能源的电能;同时,实现了高压电网侧端口单位功率因数。理论分析、仿真及实验均验证了所提出的新型电力电子固态变压器控制技术方案的良好性能与可行性。

关键词： Couplings   Transconductance   Silicon   MOSFET   Logic gates   Silicon-on-insulator   Electric potential   Radio frequency   Data models   Space charge   Body-contacted   compact model   dynamically depleted silicon-on-insulator (DDSOI)   RF   symmetric BSIM-SOI   transconductance  

摘要： In this work, we present a physical understanding and a robust surface potential coupling relationship essential to accurately capture the transconductance in body-contacted (BC) dynamically depleted silicon-on- insulator (DDSOI) MOSFETs for varied body biases. It is observed that the crossover of transconductance for varied body biases occurs before the peak transconductance is reached for devices operating particularly in the saturation region. This phenomenon is investigated in detail and attributed to partial-depletion-to-full-depletion transition in the silicon body that occurs before the peak transconductance is reached, in the saturation region of operation. The proposed coupling relationship effectively captures this behavior, ensuring symmetry of the overall model around V-ds = 0 V and correct harmonic characteristics in linear and saturation regions, which are critical for RF IC design. An enhanced mobility model with improved body bias dependency has also been proposed that helps in the accurate validation of transconductance. The model is validated with state-of-the-art industry hardware data from GlobalFoundries. The model has been integrated into our new industry standard symmetric BSIM-SOI compact model framework.

关键词： Degradation   Neurons   Stress   MOSFET   Silicon-on-insulator   Logic gates   Temperature measurement   Semiconductor device measurement   Current measurement   Thermal stresses   Band-to-band-tunneling (BTBT)   on regime (I-ON)   reliability   silicon on insulator (SOI)   spiking neural network (SNN)   subthreshold (SS) regime  

摘要： Low-power operations are essential for implementing large spiking neural networks (SNNs) in real-world applications. An area and energy-efficient demonstration of a functional liquid state machine (LSM) for spoken word detection using the band-to-band-tunneling (BTBT)-based neuron was proposed earlier. For a product-level demonstration of the BTBT regime operating chips, the variability and reliability of neurons emerge as noteworthy concerns for neuromorphic processors due to the potential implications for performance degradation over time. In this work, we characterize and compare the reliability of partially depleted (PD) silicon on insulator (SOI) transistors in the BTBT and on-regime ( Undefined control sequence I-ON ) regimes. The drain current fractional degradation ( Delta I-D/I-D) increases with an increase in voltage and thermal stress in the BTBT and Undefined control sequence I-ON regime. The reaction-diffusion-drift (RDD) framework is used to estimate device degradation under operating bias conditions. At operating bias, a similar to 17% fractional degradation is observed in the BTBT regime operation for ten years, comparable to the degradation observed in the Undefined control sequence I-ON regime. Finally, we analyzed the impact of device degradation on the SNN performance.

关键词： Transistors   MOSFET   Logic gates   Silicon   Photonic band gap   Logic   Green's function methods   2-D material   field-effect transistor (FET)   logical applications   mid-frequency model   non-equilibrium Green's function (NEGF)   quantum transport   tight-binding (TB)  

摘要： A sub-nanometer field-effect transistor (FET) with MoSi(2)N(4 )as the channel material is investigated using non-equilibrium Green's function (NEGF) formalism for possible application in modern digital technology. The transistor input, output, and transfer characteristics are reported for 0.6 V supply. The output and transfer characteristics of the drain current versus the drain-source and gate-source voltages are investigated. The nMOS transistor ON-current is found to be two and a half times greater than that of the pMOS. In addition, the pMOS transistor shows about two orders of magnitudes smaller OFF-current with respect to nMOS, one for short channel length. The low value of I-OFF leads to lower static power, fascinating to digital applications. The BSIM4 model version 4.8 is utilized for extracting the mid-frequency model with a precision of more than 99%. An evident matching between NEGF and Berkeley Short-channel IGFET Model (BSIM) models is observed for the investigated logic.

关键词： integrated circuit manufacture   MOSFET   nanofabrication  

摘要： In this letter, to improve the performance and reduce leakage currents of bulk low-temperature multi-layer SiGe/Si superlattice (SL) fin field-effect transistors (FinFETs), a p-type omega-shaped channel (Omega-channel) SL FinFET is realized by etching a Si/Si0.7Ge0.3 triple-layer stacked structure in a replacement metal gate (RMG) module on a silicon-on-insulator (SOI) substrate. In addition, a self-allied Ni0.9Pt0.1 silicide process and a low-thermal-budget (<= 400 degrees C) integration procedure were performed on the Omega-channel SL FinFET. Test results demonstrate that the on-state current (Ion) is increased by 5.5 times (from 78 to 429 mu A/mu m) and the off-state current (Ioff) is reduced by 78.8% (from 5.2 x 10-3 to 1.1 x 10-3 mu A/mu m) when compared with the corresponding currents of traditional bulk SL FinFETs.

关键词： MOSFET   power MOSFET   Schottky diodes   semiconductor device breakdown   semiconductor devices  

摘要： An improved 4H-SiC SBD-wall-integrated trench metal-oxide-semiconductor (SWITCH-MOS) with n-bury and split-gate is proposed. Under the premise of ensuring breakdown voltage (BV), the n-bury layer can smooth the path to current conduction, which reduces the specific on-resistance (RON, SP) and improves static characteristics. Besides, the split-gate is able to transform the gate-drain capacitance (CGD) and improve the dynamic characteristics. Therefore, a superior forward performance that SWITCH-MOS always craves is achieved. According to the simulation results, compared to the conventional SWITCH-MOS with almost the same BV, the proposed one reduces the RON, SP by 57% and the CGD by 59% while gaining equally advanced reverse performance. Its reverse conduction voltage is only -1.78 V, but its figure of merit reaches 1.67 GW/cm2 and 65 m OmeganC, which is attractive for the application in power inverters.

关键词： SiC MOSFET   Reverse conduction   Low switching losses   Bipolar degradation  

摘要： A novel asymmetric trench Silicon Carbide Metal Oxide Semiconductor Field Effect Transistor (SiC MOSFET), featuring an integrated channel accumulation diode (CAD-MOS), has been proposed and investigated through numerical simulation. This innovative design aims to mitigate switching losses and eliminate the bipolar degradation of the body diode. The current spreading layer (CSL) channel, strategically positioned in the centre of the dummy gate, offers a low-barrier reverse conduction path. This represents a substantial advancement over the traditional PN body diode, significantly reducing the reverse conduction voltage drop from 2.84 V in the PN body diode to a mere 1.39 V in the CAD-MOS. Meanwhile, the reverse recovery charge of the CAD-MOS is reduced to 0.95 mu C/cm2, and the peak reverse recovery current stands at 45 A/cm2. Compared to conventional asymmetrical trench SiC MOSFET (CON-MOS), the CAD-MOS exhibits a 68.1 % reduction in reverse recovery charge and a 63.4 % decrease in peak reverse recovery current. The split-gate design also reduces the device gate to source capacitance (CGS), resulting in a 17.4 % reduction in total switching losses to 3.64 mJ/cm2. CAD-MOS also exhibits a reduced gate turn-on charge and demonstrates an enhancement in high-frequency figure of merit (HF-FOM) by 8.1 %.

关键词： Reliability   Fault trees   Analytical models   Motors   MOSFET   Hidden Markov models   Sensors   Operation principles   reliability evaluation   reliability model   switched reluctance motor  

摘要： This paper proposes an enhanced k-out-of-n:G model to assess the reliability of the dual-stator switched reluctance motor system (DSSRM). Firstly, the failure rates of power components are calculated as the basis for evaluating the system-level reliability. Then, traditional system-level reliability models, including fault tree and Markov models, are established. Subsequently, the proposed model is established based on the same predefined failure discrimination with Markov model, and the corresponding reliability calculation process is derived. The reliability of power converter in the DSSRM system is quantitatively compared based on the three models. The results indicate that the fault tree model yields overly conservative evaluations. And the proposed model almost maintains same results with the Markov model, and simplifies effectively the modeling and solving process. Finally, the experiments are developed to verify the validity of reliability assessment results.

关键词： Detection   gas spectroscopy   high-bandwidth   Gaussian beam   MOSFET   power coupling   quantum-cascade lasers (QCLs)   terahertz  

摘要： Monolithically integrated, antenna-coupled fieldeffect transistors (TeraFETs) are rapid and sensitive detectors for the terahertz range (0.3-10 THz) that can operate at room temperature. We conducted experimental characterizations of a singlepatch-antenna-coupled TeraFET optimized for 3.4 THz operation and its integration into an 8x8 multielement detector configuration. In this configuration, the entire TeraFET array operates as a unified detector element, combining the output signals of all detector elements. Both detectors were realized using a mature commercial Si-CMOS 65-nm process node. Our experimental characterization employed single-mode quantum-cascade lasers (QCLs) emitting at 2.85 and 3.4 THz. The 8x8 multielement detector yields two major improvements for sensitive power detection experiments. First, the larger detector area simplifies alignment and enhances signal stability. Second, the reduced detector impedance enabled the implementation of a TeraFET+QCL system capable of providing a-3 dB modulation bandwidth up to 21 MHz, which is currently limited primarily by the chosen readout circuitry. Finally, we validate the system's performance by providing high-resolution gas spectroscopy data for methanol vapor around 3.4 THz, where a detection limit of 1.6 x 10(-5) absorbance or 2.6 x 10(11) molecules/cm(3) was estimated.