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Investigation of the Impact of 10 nm High-κ SrTiO3 Gate Dielectric on the Performance of β-Ga2O3 Metal-Oxide-Semiconductor Field-Effect Transistors

Labed, Madani Ryu, Dae Haa Park, Jang Hyeok Chung, Hyunbin Choi, Taekjib Rim, You Seung

Sejong Univ Hybrid Mat Res Ctr Seoul 05006 South KoreaSejong Univ Dept Nanotechnol & Adv Mat Engn Seoul 05006 South KoreaSejong Univ Dept Semicond Syst Engn & Convergence Engn Intelli Seoul 05006 South KoreaSejong Univ Inst Semicond & Syst IC Seoul 05006 South Korea

来源详细信息

关键词： MOSFET beta-Ga2O3 Al2O3SrTiO3 10 nmgate oxide temperature dependent

摘要： High-kappa dielectric materials have gained significant attention in the field of semiconductor devices due to their potential to reduce gate dielectric thickness while enhancing device performance. This study presents a metal-oxide-semiconductor field-effect transistor (MOSFET) that utilizes an ultrathin SrTiO3 gate dielectric and compares it with a conventional Al2O3-based MOSFET. The Al2O3/beta-Ga2O3 MOSFET, featuring a 10 nm gate dielectric, exhibited a high tunneling rate, significantly affecting the depletion of beta-Ga2O3. In contrast, the SrTiO3-based MOSFET demonstrated a lower tunneling rate, reduced reverse drain current, and improved drain on/off ratio, highlighting the effectiveness of high-kappa materials like SrTiO3 in minimizing gate dielectric thickness and potentially extending Moore's law. Detailed analysis of the depletion and channel formation mechanisms in the SrTiO3/beta-Ga2O3 MOSFET was performed. Additionally, the impact of various gate metals on device performance was investigated, revealing that high-work-function metals enabled more efficient depletion compared to low-work-function metals. Temperature-dependent simulations using titanium (Ti) and platinum (Pt) as contact metals indicated that Pt-based MOSFETs operate effectively at elevated temperatures, unlike Ti-based MOSFETs. Lastly, the study examined the effects of interfacial charge types and densities at the SrTiO3/beta-Ga-23 interface on the MOSFET performance.

Electrostatic Discharge and Failure Model of Carbon Nanotube Field-Effect Transistors

Yachi Duan Can Yang Dong Zhang Yuepeng Gao Yichao Sun Jia Si Peng Lu Xiaojing Li Jianhui Bu Bo Li

Institute of Microelectronics Chinese Academy of Sciences Beijing ChinaSchool of Integrated Circuits University of Chinese Academy of Sciences Beijing ChinaKey Laboratory of Science and Technology on Silicon Devices Chinese Academy of Sciences Beijing ChinaKey Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics School of Electronics Peking University Beijing China

来源详细信息

关键词： Field effect transistors Electrostatic discharges Logic gates Metals Discharges (electric) Dielectrics Transient analysis MOSFET Silicon Electric breakdown

摘要： The electrostatic discharge (ESD) and failure mechanisms of carbon nanotube field-effect transistors (CNT FETs) were thoroughly investigated via transient current tests and numerical simulations. Experiments demonstrated that CNT FETs have a three-stage ESD process according to transmission-line pulse (TLP) and human-body model (HBM) measurements, vastly different from the snapback phenomenon in conventional Si CMOS transistors. As the drain bias ( ${V} _{\text {DS}}$ ) increases from 2 to 12 V, the ESD mechanism of CNT FETs changes from thermionic emission (first stage) to band-to-band tunneling (second stage), which results in a dynamic discharge impedance. The soft breakdown of the drain-to-gate isolation dielectric contributes to the discharge current in the third stage when ${V} _{\text {DS}} \gt 12$ V. The breakdown current-induced heating of CNT FETs can cause critical damage to the drain-to-gate isolation dielectric and the metal contacts and eventually result in device failure. Therefore, the drain-to-gate isolation dielectric is identified as the weak spot, requiring optimization to enhance the reliability of CNT FETs.

Comprehensive Review of Wide-Bandgap (WBG) Devices: SiC MOSFET and Its Failure Modes Affecting Reliability

Ghulam Akbar Alessio Di Fatta Giuseppe Rizzo Guido Ala Pietro Romano Antonino Imburgia

L.E.PR.E. High Voltage Laboratory Department of Engineering Università degli Studi di Palermo 1 90133 Palermo ItalyDepartment of Electrical Engineering Sukkur IBA University Sukkur 65200 Pakistan

来源 MultidisciplinaryDig...