课程文献中心 更多>>

关键词： MOSFET   breakdown voltage   specific on-resistance   BCD  

摘要： For the past few decades, metal-oxide-semiconductor field-effect transistors (MOSFETs) have been the most important application in IC circuits. In certain circuit applications, the breakdown voltage and specific on-resistance serve as key electrical parameters. This article introduces a readily accessible approach to enhance the source-drain breakdown voltage (BVDS) of MOSFETs based on the Bipolar-CMOS-DMOS (BCD) platform without extra costs. By attentively refining the process steps and intricacies of the doping procedures, the breakdown voltages of NMOS and PMOS experienced increments of 3.4 V and 4.6 V, translating to enhancements of 31.5% and 50.3%. Parallel simulations offer insightful mechanistic explanations through simulation tools, facilitating superior outcomes. This initiative lays significant groundwork for the advancement of a comprehensive BCD process development framework.

关键词： Capacitors   Switches   MOSFET   Discharges (electric)   Clamps   Silicon carbide   Voltage   Clamping   high power   power module   series-connection   silicon carbide (SiC) mosfet   voltage source converter (VSC)  

摘要： This letter employs active clamping modules (ACMs) to balance voltages of series-connected silicon carbide (SiC) mosfets in a voltage source converter (VSC). Under high power conditions, the ACM capacitors have large voltage ripples exceeding the voltage rating of SiC mosfets. It analyses the charging mechanisms in VSCs, and shows the large ripple is mainly caused by the excessive charging during the switching commutation process. Then, a control strategy is proposed to recycle this commutation energy back to the dc bus in each switching cycle. The effectiveness of this approach is demonstrated with a 7.2 kV/75A power module comprising six SiC mosfets, achieving a 70% reduction in voltage ripple during a 1.5 kV/50A test. With the proposed control strategy, the voltage ripple is independent of load conditions, and balancing of series-connected SiC mosfets and low power losses of the balancing circuits are maintained.

关键词： Electrostatic discharge (ESD)   silicon- controlled rectifier (SCR)   dual-direction   holding voltage   trigger voltage  

摘要： This study proposed a dual silicon- controlled rectifier (SCR)-based protection device with an enhanced structure and high holding voltage for protection against electrostatic discharge (ESD). The structure facilitates an electrical connection between the bridge and additional N+ diffusion regions to turn on an additional NPN parasitic bipolar transistor on the SCR loop path and reduce the SCR positive feedback loop gain. Consequently, the snapback characteristics of the conventional device were improved. A two-dimensional technology computer-aided design (TCAD) simulation was performed to verify the operating principles and identify the characteristics of this device. Subsequently, the proposed device and a low-trigger dual-directional (LTDD) SCR were fabricated using a 0.18 mu m bipolar-CMOS-DMOS (BCD) process under identical conditions. Further, the transmission-line- pulse (TLP), transient latch-up (TLU) measurement method, and hot-chuck control system were used to evaluate the electrical characteristics and thermal reliability. In addition, the electrical characteristics of the device were optimized utilizing design variables. The measurement results indicated that the proposed device exhibited an improved holding voltage of 11.31 V, which was further optimized to 14.24 V using a suitable design parameter. Moreover, it demonstrated sufficient thermal reliability with a holding voltage greater than 12 V at 500 K. Therefore, this device is suitable for 12-V-class applications and is expected to provide excellent area-based efficiency and thermal reliability.

关键词： Iron   Indium gallium arsenide   TFETs   Capacitors   MOSFET   Logic gates   Hafnium oxide   Ferroelectric (FE) FET   Hf0.5Zr0.5O2(HZO)   InGaAs   metal-ferroelectric-metal-insulator-semiconductor (MFMIS)   tunnel FET  

摘要： We study device structures and their design points of HfZrO X -based InGaAs metal-ferroelectric-metal-insulator-semiconductor (MFMIS) ferroelectric tunnel FETs (Fe-TFETs) based on ferroelectric (FE) polarization-controlled band-to-band tunneling (BTBT) for stable nonvolatile memory (NVM) operation. We monolithically integrated a HfZrO X MFM capacitor into the baseline tunnel field-effect transistor (TFET), which has steep subthreshold swing (SS) characteristics of sub-60 mV/decade with a HfO2 /Al2O3 gate-stack, compared to the reference MOSFET. We found temperature-stable NVM behaviors of the InGaAs Fe-TFET compared to the InGaAs ferroelectric MOSFETs (Fe-MOSFETs) at the measurement temperature range from - 20 C-degrees to 85 C-degrees. Furthermore, we explored the scaling effects of the MFMIS structure using a high- kappa HfO2 gate insulator layer to pursue a steep SS, and a large capacitance ratio between the dielectric (DE) and FE capacitors. The InGaAs MFMIS-structure Fe-TFET achieves stable retention over 10(4) s and excellent endurance during 10 6 cycles at the DE/FE capacitance ratio of 27.5.

关键词： 部分功率变换器   电池储能系统   电压调节   电压均衡   多绕组变压器  

摘要： 在电池储能系统领域，部分功率变换器因大幅缩减了变换器容量而具有显著优势，但宽范围调压时效率低，且电池包电压均衡的实现复杂。为此，本文基于部分功率变换器，提出了一种效率及功率密度更高，且电池包电压自动均衡的电池储能DC-DC变换器。本拓扑隔离级采用两级式架构，利用CLLC型直流变压器连接各个电池包和双极性Buck电路。在拓扑中，CLLC型直流变压器提供了隔离的低阻抗通道，实现了电池包之间电压的自动均衡。同时，双极性Buck电路代替传统隔离型DCDC实现电压调节，使变换器在160-240 V宽范围调压下的效率最大提高了1.05%。此外，与现有部分功率变换器相比，本拓扑将磁元件体积和开关数量分别降低了29.72%和6个，显著提升了系统的功率密度。最后，本文分别搭建了200 V，1.5 kW的仿真和实验平台验证了本拓扑的可行性。

关键词： 虚拟同步发电机(VSG)   虚拟电感(VI)   功率解耦   功角补偿   电压补偿  

摘要： 随着可再生能源发电渗透率不断提高，电网普遍存在转动惯量不足的隐患，基于虚拟同步发电机（VSG）技术的变流器控制策略虽可有效缓解这一难题，但其运行在中低压线路时将产生功率耦合，极大限制变流器功率输出能力。首先探究VSG功率耦合机理，得出其致因在于中低压情况的功角θ和阻抗角θzg不能满足理论假设条件。然后分析并改进虚拟电感（VI）控制缺陷，同时考虑功角扰动和电压变化，推导出所需功率补偿量大小对功率环路加以矫正，以消除系统发生扰动时VSG输出无功功率波动，最终提出基于自适应电流补偿（ACC）的VSG增强功率解耦策略，显著提高解耦程度，且进一步提升控制系统在不同运行工况下的稳定性。最终利用Matlab/Simulink仿真证明所提方法可更好地应对功率耦合问题。

关键词： Monolithic integrated circuits  

摘要： This study demonstrates pseudo-source-gated beta-gallium oxide (beta-Ga2O3) metal oxide semiconductor field effect transistors (MOSFETs). The proposed pseudo-source gated transistor (pseudo-SGT) architecture has a thin (similar to 11 nm) recessed channel design, effectively emulating conventional SGT characteristics without significantly compromising on-current. The fabricated devices exhibit remarkable intrinsic gain of 10(4), low output conductance of 10(-8) S/mm, transconductance of 10(-3) S/mm, and drain saturation voltage of similar to 1.5 V, while maintaining a drain current of 1.3 mA/mm. These enhanced performance metrics significantly expand the potential of beta-Ga2O3 MOSFETs for the development of Ga2O3 monolithic power integrated circuits. (c) 2024 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license

关键词： 超高效合相色谱法   禽蛋   咪唑类药物   代谢物  

摘要： 建立了同时快速测定禽蛋中16种咪唑类药物及其代谢物的超高效合相色谱(UPC2)方法。样品用乙腈提取，经PRIME HLB柱净化，采用ACQUITY UPC2HSS C18SB色谱柱分离；以超临界二氧化碳为主要流动相，甲醇为改性剂，在35 ℃、12.41 MPa条件下进行梯度洗脱；二极管阵列检测器（PDA）检测，外标法定量。结果表明，16种咪唑类药物及其代谢物在0.2 ～ 20 mg/L浓度范围内(三氯苯达唑（TCDZ）和奥芬达唑（OFDZ）在0.4 ～ 20 mg/L范围)线性关系良好，线性相关系数均不低于0.998，检出限（LODs）为1.5 ～ 3.0 μg/kg，定量限（LOQs）为5.0 ～ 10.0 μg/kg。在高（250 μg/kg）、中（100 μg/kg）、低（5 μg/kg 或10 μg/kg）3个浓度水平下进行加标实验，16种目标物质的加标回收率为80.9% ～ 118.4%，相对标准偏差为0.5% ～ 4.7%。该方法适用于禽蛋中咪唑类药物及其代谢物的快速分析。

关键词： 超宽带   滤波器   三陷波   小型化   带外抑制  

摘要： 为了解决超宽带系统通带较宽，易受到其他信号干扰的问题，提出了一种小型化三陷波超宽带滤波器。通过非对称耦合技术以及在超宽带滤波器上加载方开环谐振器和开环谐振器来实现三陷波特性。该超宽带滤波器的通带为3.0～12.3GHz，相对带宽为121.6%，分别在4.5GHz、6.5GHz和10.1GHz处产生三个陷波，且陷波深度分别为24.1dB、18.3 dB、31.7 dB，能够避免5G频段（n79频段）、区域性IMT新频段（6G频段）和X通信频段对超宽带系统的干扰。该滤波器的尺寸仅有18.04 mm×5mm，符合小型化的需求，中心频率为6.85GHz，带外抑制效果较好。最后，对设计制造的实物进行测试，测试结果与仿真结果基本一致。

关键词： 滤波器   电源   地线  

摘要： 电源滤波器在安装时常出现漏接地线等安全问题,本文针对此现象提出了一种防漏接地线的安全型电源滤波器的设计方案.通过挤压移动支撑板,对挡块进行控制,若漏接地线,挡块则进行阻挡,使滤波器主体内电路无法连通;通过限位块和滑槽的配合阻挡挤压块的复位,避免地线滑落.本文所提出的设计方案不仅能够避免漏接地线,也能够提高滤波器的安全稳定性.