关键词:
ultra-wideband
power amplifier
GaN HEMT
Chebyshev converter structure
load-pull
摘要:
: Ultra-wideband power amplifier is the core,versatile and high value-added components in wideband communications,electronic countermeasures and radar *** the demand for communication systems continues to increase,the need for power amplifiers with wider bandwidth,higher efficiency,and more power is *** ultrawideband power amplifier is designed based on GaN(gallium nitride)high electron mobility transistor(HEMT)with operating frequency from 0.46GHz to ***,the input matching is optimized to achieve absolute stability and high gain in the full frequency ***,the high power and high efficiency output matching impedance space is extracted by load-pull design at different frequency points within the target frequency band,and then a four-stage Chebyshev impedance converter is applied as the output matching topology to achieve high efficiency and high output power in the wide frequency *** test results show that within the operating band from 0.46GHz to 3.9GHz,the overall output power(P-out)is out )is greater than 13.8 W with the maximum output power of 24.1 W;the full-band drain efficiency is greater than 50.1 degrees o with the maximum value of 67.2 degrees o at *** measured results are in good agreement with the simulation results,and the design idea is intuitive and clear,which provides a direction for designing the currently required ultra-wideband power amplifier.