课程文献中心 更多>>

关键词： 1.55μm   InP/InGaAsP   高功率激光器   P型掺杂   锥形波导  

摘要： 1.55 μm高功率半导体激光器广泛应用于长距离主干网光网络、无人驾驶等领域,在应用系统中更高的激光出光功率有利于提升系统的工作距离和接收端的信噪比;随着光电子集成和共封装光学的快速发展,其高光电集成密度要求激光器具备低功耗等性能.本文通过优化激光器外延P-InP掺杂,激光器室温下串联电阻从3.2 Ω降低至2.2 Ω,器件电阻性能优于相同结构对比器件,300 mA电流下器件电功耗从510 mW降低至430 mW.进一步采用锥形波导结构提高激光器增益体积,测试结果显示,锥形波导结构使激光器出光功率提升17%以上,同时器件电功耗无明显增加;室温低电流下器件最高光电转换效率接近50%,与相关研究报道结果优值相当;远场测试结果显示,激光器水平方向发散角有效降低,同时器件光束质量未发生明显变化.实验结果为面向光电子集成应用的低功耗高功率半导体激光器提供了研究基础.

关键词： MOSFET   Logic gates   Inductors   Threshold voltage   Circuits   Transformers   Zero voltage switching   DC transformer   DCX   high efficiency   high frequency   high power density   LLC   resonant gate driver (RGD)  

摘要： The LLC dc transformer (LLC-DCX), due to its soft-switching characteristics, achieves high-efficiency energy transfer at high frequencies and is extensively used in high power density applications. However, the drive loss of conventional drive integrated circuits (ICs) is proportional to the switching frequency, leading to disproportionately high gate drive loss at higher frequencies, thereby limiting further increases in the LLC-DCX switching frequency. In this article, a dual channel push pull clamped-interlock resonant gate driver (DPCRGD) is introduced for driving the secondary-side metal-oxide -semiconductor field effect transistor (MOSFETs) of LLC-DCX. The proposed DPCRGD provides two complementary driving signals for LLC-DCX. Compared to conventional voltage source drivers and existing research, the RGD presented here demonstrates lower drive loss and a smaller footprint. This article details the operational principles, loss analysis, parameter optimization design, and comparative studies of the DPCRGD. Ultimately, a prototype operating at 1.3 MHz with an output power of 48 V-6V/30 A was developed. Experimental results validate the effectiveness of the proposed DPCRGD, showing a reduction of gate drive power loss by nearly 88% and a 49% decrease in footprint compared to conventional voltage source driving circuits.

摘要： We report a monolithic bidirectional dual-gate metal-oxide-semiconductor field effect transistor (MOSFET) fabricated on epitaxially grown beta-Ga2O3, demonstrating efficient two-way conduction and blocking. It features two independently controlled gates and operates in four distinct modes, offering flexibility in managing current and voltage in the first and third quadrants. This versatility makes it ideal for various power conversion system applications. The device operates at a low negative threshold voltage (~-2.4 V for both gates) with a zero turn-on drain voltage and an on-resistance of approximately 500 ohm-mm. It exhibits a high on/off current ratio of 1e7 in all three conducting modes. In the blocking mode, the device breakdown was measured to be more than +-350 V with a current compliance of 0.5 mA/mm. The estimated breakdown field and power figure of merit for the device are 0.35 MV/cm and 1.6 MW/cm2 respectively.

关键词： MOSFET devices  

摘要： We report a monolithic bidirectional dual-gate metal-oxide-semiconductor field effect transistor (MOSFET) fabricated on epitaxially grown β-Ga2O3, demonstrating efficient two-way conduction and blocking. It features two independently controlled gates and operates in four distinct modes, offering flexibility in managing current and voltage in the first and third quadrants. This versatility makes it ideal for various power conversion system applications. The device operates at a low negative threshold voltage (~-2.4 V for both gates) with a zero turn-on drain voltage and an on-resistance of approximately 500 Ω·mm. It exhibits a high on/off current ratio of 107 in all three conducting modes. In the blocking mode, the device breakdown was measured to be more than ±350 V with a current compliance of 0.5 mA/mm. The estimated breakdown field and power figure of merit for the device are 0.35 MV/cm and 1.6 MW/cm2 respectively. © 2024, CC BY.

关键词： radiation effects   MOSFET   gate-all-aroundtransistor   focused ion beam   displacement damage   total ionizing dose  

摘要： Recent developments in state-of-the-art (SOTA) complementary metal-oxide-semiconductors (CMOS) integrated circuits (IC) have yielded devices with a robust response to total ionizing dose (TID), and improved dose-rate upset (DRU). However, the Gate-All-Around (GAA) device architecture fundamentally changes the gate and isolation dielectric structures, with unknown impact on TID performance. In addition, the adoption of GAA architecture isolates the active device regions from the underlying silicon substrate in a way that makes these transistors behave like devices based on silicon-on-insulator technology. This dramatically reduces the radiation-induced charge collection volume of the transistor, which may significantly improve the DRU and single event effect response of GAA ICs. As these devices get adopted by industry (announced by Integrated Device Manufacturers), it is paramount to understand their performance and failure mechanisms in space radiation environments before their integration in satellite systems. In this work, we expose GAAs to a variety of surrogate radiation environments, and model relevant space radiation effects. Specifically, we use Li ions to create displacement damage (DD) in these devices. Since using ions creates a significant amount of total ionizing dose (TID), we use an electron beam to test the effects of the TID alone. Lastly, since the linear energy transfer (LET) of Li ions is a small fraction compared to the LET of cosmic rays, we also investigate the response to transient ionization by irradiating GAAs with high-intensity visible light, creating a high density of electron-hole pairs without DD.

关键词： 国产大功率   综采采煤机   质量问题   对策  

摘要： 随着国内煤炭产业的迅速发展,国产大功率综采采煤机在煤矿生产中出现愈发严重的质量问题,严重制约了产业的发展.因此,本文深入探讨了国产大功率综采采煤机在质量方面所存在的问题,如液压元件质量不稳定、采煤机漏油、滚筒及截齿易磨损等,并对引进设备在装机功率、使用寿命、新技术应用和经济效益等方面进行了对比.在此基础上,提出了针对性的对策和建议,包括液压采煤机技术改造、开发具有自主知识产权的大功率电牵引采煤机、加强质量管理和培训体系、优化设备维护与检修机制等,旨在提高国产大功率综采采煤机的质量水平,促进煤炭产业的可持续发展.

关键词： 电子变压器   信息物理系统   光伏消纳  

摘要： 电力电子变压器可以在光伏发电系统中实现精准高效的能量转换和控制,提高光伏消纳的效率和稳定性.此外,电力电子变压器的信息物理系统原理还可以帮助实现光伏发电系统的远程监测和管理,通过数字化技术,可以实时获取、处理和传输光伏发电系统的数据,从而有效优化能源管理,提高智能能源系统的安全性、可靠性和经济性等方面的指标.基于此,本文主要就电力电子变压器的信息物理系统光伏消纳展开研究.

关键词： 风电   电网负荷   风机   多尺度卷积神经网络   双向选择能神经网络  

摘要： 本项目针对当前电网负荷预报中因极端气候导致的风机出力急剧变化这一科学问题,拟采用多尺度卷积神经网络与双向选通神经网络相结合的方法,建立一种新的风力发电短时预报模型.利用"黑蜘蛛"优化方法,实现对网络的超参参数的自适应调整,从而有效克服了在恶劣气象环境下模式的准确性受到影响的难题.试验证明,该方法与传统方法相比,该方法的预报准确率更高,推广性更好.