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关键词： Noise   Switches   Voltage   Multichip modules   Mathematical models   Electromagnetic interference   Integrated circuit modeling   Silicon carbide   MOSFET   Impedance   Common mode (CM) current   electromagnetic interference (EMI) model   parasitic parameters   power module   SiC MOSFETs  

摘要： The penetration rate of SiC mosfets is gradually increasing due to their excellent electrical and thermal characteristics. However, the wide-bandgap devices exhibit faster di/dt, dv/dt and are more sensitive to parasitic inductances of power module during switching transients. Meanwhile, the influence of parasitic inductances on the propagation path of electromagnetic interference cannot be ignored either. The coupling between the switching transient waveforms and the propagation paths is formed through parasitic inductances. This article elucidates the impact of parasitic inductances and capacitances of power modules at different positions on common mode (CM) current during switching transients and provide constraints for the optimal range of parasitic parameters by establishing a conducted time-domain CM mathematical model considering power modules's parasitic parameters. The switching waveforms are divided into CM noise sources and differential mode (DM) noise sources. So the CM current is not only related to the CM noise source, but also to the DM noise source due to the asymmetric parasitic parameters of the power module. Based on the analysis, this article can identify the impact of parasitic parameters at different positions of power modules on CM current at different switching stages and guide the selection and redesign of the commercial power modules to reduce CM current and switching losses based on the switching characteristics. In the experiment, the double pulse test with power module BSM120D12P2C005 is established, and the influence of different layouts of power modules on CM current is verified and compared.

关键词： Crosstalk   Logic gates   Silicon carbide   MOSFET   Driver circuits   Transient analysis   Circuits   Switches   Transistors   Switching circuits   Crosstalk suppression   fast switching transient   gate-source driver circuit   parasitic parameters   SiC MOSFET  

摘要： Power converters composed of SiC mosfets with fast switching transients are widely used in high-performance, high-power applications. Wide bandgap semiconductor devices with high switching frequencies in the driver circuits are highly susceptible to the gate-source crosstalk voltages during fast switching transients, which can lead to mis-conductance and shoot through phenomena in complementary bridge arms. In this article, an improved crosstalk suppression gate-source driver topology based on transistors and passive components is proposed to effectively suppress the crosstalk issues of the voltage source inverters. It does so without compromising the performance of SiC power devices by strategically putting the auxiliary circuits into or removing them out of the gate-source driver circuits as necessary, ensuring the normal operation is maintained. Additionally, the auxiliary transistors can flexibly adjust their operating modes according to the crosstalk patterns in the gate-source driver circuits without the need for extra control signals or external excitation. The improved driver circuit uses transistors and passive components for crosstalk suppression, which enhances the reliability of the drive system to a certain extent. Finally, the feasibility and effectiveness of the improved crosstalk suppression driver topology are verified by simulations and experiments.

关键词： Switches   Inverters   Zero voltage switching   Design methodology   Voltage   Capacitors   Mathematical models   Shunts (electrical)   MOSFET   Training   Body diode conduction   class-E inverter   full-range soft switching   quasi-constant voltage (CV) output   shunt capacitor recharging  

摘要： In this letter, a novel parameter design methodology is proposed to achieve a full-range soft switching for the Class-E inverter with a quasi-constant voltage (CV) output. The metal-oxide-semiconductor field-effect transistor's (mosfet's) body diode conduction in advance and the shunt capacitor recharging phenomenon during the switch-off period are analyzed by proposing a more precise modeling method. With the optimized resonant parameters, hard switching due to recharging of the mosfet's shunt capacitor can be avoided. Thus, the load-independent zero voltage switching is extended to the whole load range. Moreover, a quasi-CV output, tailored to the varying load, is obtained within a certain range with the proposed parameter design methodology. An experimental setup is fabricated at 1 MHz and the feasibility of the proposed method has been verified through experimental results.

关键词： 风电变压器   螺栓连接   VDI2230   有限元模型   安全系数  

摘要： 风电变压器主要固定在风机的塔筒或机舱内，为了确保风电变压器螺栓连接的安全性，需对其强度进行校核。首先应用ANSYS软件建立风电变压器有限元模型，并根据计算结果，提取各工况下螺栓轴向力和最大横向力，基于VDI2230标准在满足紧固接触材料许用应力的条件下对螺栓进行强度校核，结果显示连接螺栓强度、疲劳、内压力、滑移和剪切均得到校核，安全系数仿真计算和试验数据偏差小于9%,对于风电变压器可以采用结构仿真提取螺栓的轴向力和横向力，然后通过数学模型数值计算的方法进行螺栓选型和设计，虽然与实际试验对比存在一定范围偏差，但对于螺栓的选型和强度校核具有重要的实际生产指导意义。

摘要：

In this article, a degradation mechanism based on electric field reconstruction was proposed to evaluate the impact of heavy ion irradiation on the gate oxide of 1200 V SiC MOSFETs with planar gate structure. Experimental tests were firstly conducted by starting with a low V_DS, which was gradually increased in steps of 20 V, using ¹⁸¹Ta heavy ion species with an energy of 1483 MeV. Notably, the real-time monitoring data showed observable changes in the increasing rate of gate leakage current (I_GSS) in the high V_DS region (i.e. when V_DS exceeded 320 V in this experiment). For mechanism analysis of such experimental phenomena, TCAD simulations were carried out. Simulation results revealed that the gate oxide degradation was influenced by the coupling of two mechanisms, with ion strikes generating two electric field peaks corresponding to different physical processes. The first peak was attributed to conventional hole accumulation in the JFET region, while the second peak resulted from electric field reconstruction caused by the activation of the parasitic bipolar junction transistor. It was found that the second electric field peak which continued to rise as V_DS increased plays a dominant role in gate oxide degradation under high V_DS conditions, resulting in a change in the increasing rate of I_GSS. Furthermore, simulation results showed that the second electric field was less influenced by the ion strike position or the width of the JFET region, indicating that the electric field reconstruction could be triggered in almost any location within the active area and the traditional radiation hardness technique of optimizing JFET structures was ineffective.

关键词： Amplitude modulation  

摘要： Here, aiming at the problem of difficulty in correctly recognizing Vibration sources for pump Station plant house structures with multi-source excitation and strong background noise interference, an improved extreme-point symmetrio mode decomposition (IESMD)-power spectral entropy (PSE)-energy entropy increment (EEI) Joint Vibration source recognition method was proposed. Firstly, IESMD adaptive Separation was performed for signals preprocessed with wavelet threshold denoising and the noise spectrum theory was introduced to determine PSE and EEI thresholds to quantitatively screen intrinsic mode functions, and realize accurate recognition of Vibration sources. Then, Vibration source recognition was conducted for the measured Vibration data of 5 typical locations of Fishing Zhang Pump Station Plant House, and Vibration energy was introduced to calculate energy proportion ratios at these locations. Finally, the results showed that the proposed method can decompose multi-source signals into multiple effective frequency and amplitude modulated components;hydraulic excitation caused by rotor-stator interaction during Operation is the main Vibration source in Vibration of the pump Station plant house, its Vibration main frequency is 33.32 Hz;maximum energy proportion ratios at pump seat, outlet bend pipe and motor position can reach 84. 54%, 98. 53% and 97. 15%, respectively, they are the main reason to cause Vibration in the pump Station plant house. © 2025 Chinese Vibration Engineering Society. All rights reserved.

摘要： This work represents a 2D TCAD-based exploration of dielectrically modulated dual material gate stack source cavity hetero MOSFET (DM-GS-SCH-MOSFET) biosensor for the identification of various label-free biomolecules like uricase, streptavidin, ferro cytochrome, and protein. The investigation of sensitivity performances have been done by varying the structural constraints such as cavity length ( $$\:{L}_{cavity}$$ ) and oxide thickness ( $$\:{t}_{ox}$$ ). The variation of $$\:{L}_{cavity}$$ from 15 nm to 21 nm with the step of 3 nm and $$\:{t}_{ox}$$ variation from 1 nm to 3 nm with the step of 1 nm are considered. of The neutral biomolecules impact has been observed on various electrical parameters like On current, switching ratio, On current sensitivity, threshold voltage sensitivity, and subthreshold performance of DM-GS-SCH-MOSFET biosensor using 2D TCAD simulator. The performance of electrostatic parameters such as surface potential and current in the presence of different charged biomolecules are analyzed. From the analysis, it is found that the protein biomolecule demonstrates better performance as compared to other biomolecules. The protein biomolecule offers a voltage, subthreshold swing and On current sensitivity of 0.56, 0.96, and 1.79 achieved for a cavity length ( $$\:{L}_{cavity}$$ =15 nm) and oxide thickness ( $$\:{t}_{ox}$$ =1 nm) respectively.

关键词： MOSFET devices   transmission line pulse   multi-physics field   reliability test  

摘要： In power systems, MOSFET devices used in industrial chips exhibit more pronounced degradation when subjected to intense electromagnetic pulses than in conventional environments. Conventional reliability testing methods, which fail to simulate dynamic electromagnetic environments, are unable to accurately assess the changes in device performance under electromagnetic interference. In this study, we employed a transmission line pulse generator to apply pulse stress to N-type MOSFET devices, systematically investigating the degradation mechanisms by varying pulse features such as pulse cycle, amplitude, rise/fall times, and intervals. The results indicate that changes in the electrical properties of the devices are primarily influenced by two types of charged traps. Under the conditions of low pulse cycles, the current response of the devices may even exceed that prior to stress application. The study further analyzed the competitive mechanisms of these different traps during the device degradation process. Additionally, by varying the test temperature to mimic industrial application scenarios, we analyzed the degradation behavior of the devices under multi-physics conditions.

关键词： TFET   MOSFET   Subthreshold   Short channel   Tunneling  

摘要： The rapid miniaturization of semiconductor devices has highlighted the limitations of conventional Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), particularly in terms of short-channel effects and power dissipation. In response to these challenges, Tunnel Field-Effect Transistors (TFETs) have emerged as a promising alternative due to their ability to achieve steep subthreshold slopes and low operating voltages, making them highly suitable for low-power applications. However, the operation of TFETs is mostly limited by the tunneling efficiency, leakage current, and scalability. To address these challenges, an improved design called the Vertical Tunnel Field-Effect Transistor (VTFET) has been proposed. It offers better gate control with minimized short-channel effects. All the key performance parameters such as threshold voltage, subthreshold slope, ON-current, OFF-current, and the ON/OFF current ratio are evaluated for each structure. The threshold voltage stands at 0.37 V with a dielectric length lessened and very short gate lengths;subthreshold slope stands at 49 mV/dec with an ON-current of 5.8E-5 A and a high OFF-current at 3.8E-13 A with a significantly high ON/OFF ratio standing at 1.5E8. Structure 2 has a somewhat higher threshold voltage of 0.41 V, and an ON-current of 3.17E-5 A with OFF-current 1.98E-13 A, and gives an ON/OFF ratio of 1.6E8 by having an extended dielectric length with a short gate length. Structure 3, with increased dielectric length and long gate length, has a much larger threshold voltage of 0.69 V, subthreshold slope of 46.7 mV/dec, ON-current of 7.2E-7 A, and a very low OFF-current of 1.5E-15 A, leading to the largest ON/OFF ratio of 4.7E8. The structure 4 with low dielectric and long gate length has a threshold voltage of 0.37 V, subthreshold slope of 49.2 mV/dec, ON-current of 5.6E-5 A, and OFF-current of 3.6E-13 A, leading to an ON/OFF ratio of 1.56E8.

关键词： double-gate   intrinsic   MOSFET   PIN photodetector   recovery time  

摘要： In this manuscript, a novel double-gate PIN (DGPIN) photodiode has been proposed which exhibits faster changing of the photocurrent amplitude against changing of the light intensity. So, it can improve the slow switching operation of the ordinary PIN (OPIN) photodiode. In the proposed DGPIN, two metal-oxide-semiconductor (MOS) contacts (called the gates) on both sides of the intrinsic region have been considered. By biasing the gates, the potential barrier in the energy bands between the anode and cathode is decreased. So, the generated carriers can drift through the intrinsic region faster and the recovery time is reduced. Also, it has been shown that the forward and reverse trajectories in the photocurrent-light intensity curve (formed by increasing and decreasing of the illuminating light intensity, respectively) are closer in the DGPIN which indicates more linear current–light behavior for the DGPIN than the OPIN. For evaluating the linearity of the current–light behavior, the corresponding curves have been simply modeled by fitting ellipses. For the fitting ellipses, closer eccentricity to 1 indicates more linear current–light behavior and larger rotation angle indicates smaller recovery time of the device. By using this simple model, the effects of changing the physical and geometrical parameters of the proposed DGPIN on its linear operation and recovery time have been investigated.