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关键词： Cryogenics   Temperature   MOSFET   Logic gates   Capacitance   Threshold voltage   Delays   4 K   45RFSOI   45SPCLO   characterization   cryogenic electronics  

摘要： Characteristics of transistors from two commercial monolithic silicon-photonic processes are evaluated for the first time down to 2.5 K cryogenic temperatures. dc characterization is implemented on different types of devices. Key design parameters are extracted and analyzed with the corresponding low-temperature effects, including the increase in both threshold voltage and carrier mobility, the decrease of subthreshold swing (SS), and the severe kink effect in floating-body (FB) devices. The characterization of ring oscillators (ROs) shows the average gate delay improves by approximately 21%. The random telegraph noise (RTN) is measured and analyzed in both time and frequency domains, showing that the band tail states are likely the source of the extra noise at deep cryogenic temperature, leading to the increase of corner frequency by 10 $\times$ in the overall noise power spectral density (PSD).

关键词： 氮化镓  

ISBN: (纸本)9787560673134

摘要： 本书共8章，主要内容包括GaN体单晶衬底和Si基GaN外延、横向GaN基HEMT器件及其结构、垂直型GaN基电力电子晶体管、GaN基功率器件的可靠性、GaN基功率器件的鲁棒性验证、寄生效应对GaN基功率转换器的影响、GaN基AC/DC功率转换器、GaN基开关模式功率放大器等。本书从材料生长到器件制造、从特性分析到鲁棒性验证、从电路设计到系统应用，内容涵盖范围广，层次清晰且系统性较强，可读性较高；其内容具有一定的前瞻性与先进性，所涉及的技术领域与工艺水平均为目前国际主流。

关键词： Transimpdance   Optical preamplifier   Front-end amplifier   Fiber optic TIA  

摘要： A 45-nm metal-oxide-semiconductor field-effect transistor (MOSFET) channel process was simulated in transimpedance amplifier design performance for fiber optics and other major optoelectronics applications. Combined concepts of input stage feedforward followed by a current mirror stage with local active inductor feedback were introduced. The key advantages of this particular design are of great importance, especially in using a PMOS-based local active inductor (feedback formation) instead of a spiral inductor resulting in high transimpedance amplifier (TIA) gain as well as in extremely low power consumption. An overall TIA gain of 68.2 dB ohm was obtained with the f(-3dB) bandwidth of 2.5 GHz, 0.555 mW of power consumption, and an input-referred noise current spectral density of 31.86 pA/ root H-Z using a 1V DC budget supply.

关键词： Snubbers   Voltage   Oscillators   Clamps   MOSFET   Silicon carbide   Inductance   Silicon carbide (SiC) MOSFET   snubber   switching loss   switching oscillation   voltage spike  

摘要： Turn-off voltage spikes and switching oscillations caused by fast switching characteristics remain a pressing challenge for SiC MOSFETs. Consequently, an enhanced inductively coupled snubber for oscillation and overvoltage suppression is suggested in this study. It can also achieve a quasi-zero-voltage turn-on. It mainly consists of two parts: an inductively coupled compact PCB circuit and an RCD clamp circuit. First, the LTspice simulation is used to determine the range of parasitic inductance that can realize quasi-zero-voltage switching. Second, the clamping circuit is determined by the theoretical circuit analysis for voltage spike reduction. Finally, all the snubber circuit parameters are substituted together into the established characteristic equation, and the pole assignment method is utilized to determine the required equivalent inductance and resistance by the inductively coupled circuit for fully damped oscillations. In order to better use available space and preserve the high-frequency properties, a small inductively coupled PCB circuit is constructed. The experimental results demonstrate that the suggested enhanced snubber considerably lowers the switching loss while achieving good overvoltage and oscillation suppression.

关键词： MOSFET   Costs   Power supplies   Control systems   Voltage control   Gate drivers   Buck converters   Gallium nitride   Inductors  

摘要： As an independent consultant I get requests to design custom ac-dc power supplies. Most often, the need is for a combination of output voltages and currents that are not available off-the-shelf. But, sometimes the need is for a specialized form factor. And at other times, the need is for a customized control or monitoring interface.

关键词： MOSFET   Diamond   2DHG   Simulation   Vertical-structure  

摘要： Vertical-type two-dimensional hole gas (2DHG) diamond metal-oxide-semiconductor field effect transistors (MOSFETs), featuring vertical geometry and typically p-channel, are poised for application in future logic technology, high-voltage and high-power miniaturization complementary circuits. P-channel achieving high breakdown voltage and low on-resistance can be realized through the use of p - drift layer, while a trench structure is shown to be beneficial for increasing the drain current density of vertical-type devices. However, the cumulative impact of these key parameters on the performance of vertical-type diamond MOSFETs remains unclear. In this paper, we explore the physical mechanism that how the key parameters design affects on offstate, breakdown and output characteristics has been simulated using Silvaco TCAD tools. We propose a vertical-type trench-gate 2DHG diamond MOSFET that is favorable for general integration applications and exhibits equivalent performance to the double-gate vertical structure without relying on a high concentration of nitrogen doped layer. This demonstrates that our work offers a universal approach for optimizing the comprehensive device performance in vertical-type structures, accounting for the effects of multiple parameters across all wide bandgap material-based FETs.

关键词： Biomedical applications   biomedical electronics   dielectric barrier discharges   low-temperature plasmas   plasma applications   plasma jets   power supplies   SiC HV MOSFET   transformer-less  

摘要： This work presents a simple power converter, without any high voltage transformer, able to supply and control a plasma jet based on dielectric barrier discharge. The converter, operating in pulsed current mode, requires a single power switch and is fed by a low voltage dc source. It can deliver very short duration pulses to the plasma jet with high current amplitude. The operating principle is explained by means of the state plane analysis and is validated with simulations and experimental results. The equations provided allow for the calculation during the design stage of important characteristics of the plasma jet as the peak voltage and the duration of the pulses. The power can be easily adjusted during experimentation to comply with the desired appearance of the plasma jet.

关键词： Latches   Transistors   Delays   Power demand   MOSFET   Radiation hardening (electronics)   Inverters   Circuit reliability   radiation hardening   single event-upset   stacked transistors   triple-node-upset  

摘要： With the aggressive scaling in the feature size of transistors, single-event triple-node-upsets (TNUs) induced by charge sharing in CMOS circuits have become a significant reliability problem. In this paper, based on N-type stacked transistors, a TNU self-recovery latch called LORD-TNU is proposed. Utilizing the stacked transistors to reduce the count of sensitive nodes in the latch. In addition, we use three modules to protect each other. In the event of a soft error in one module, the remaining modules can restore the corrupted module. This design not only saves delay overhead but also minimizes area overhead. Simulation results show that compared with the four typical TNU hardened latches, the proposed LORD-TNU latch reduces area overhead by 49.76%, power consumption by 56.07%, delay by 40.17%, and the power-delay-product (PDP) by 72.56% on average, respectively. Moreover, the robustness of our LORD-TNU latch is confirmed by comprehensive PVT (Process, Voltage, Temperature) and Monte Carlo simulations, demonstrating its stability across a range of process corners, supply voltage, and temperature variations.

关键词： 大功率  

ISBN: (纸本)9787111755050

摘要： 本书首先对脉冲功率开关的发展历程进行了总体概述, 然后分别论述了电流控制型器件 (具体包括GTO晶闸管、GCT和IGCT、非对称晶闸管) 和电压控制型器件 (具体包括功率MOSFET、IGBT、SITH) 的结构、工作原理、特性参数、封装技术、可靠性及其在脉冲功率系统中的应用, 特别讨论了几种新型专门用于脉冲功率领域的半导体开关 (包括反向开关晶体管、半导体断路开关、漂移阶跃恢复二极管、光电导开关和快速离化晶体管) 的机理模型和实际运用等问题 , 论述了部分新型碳化硅基器件, 最后阐述了脉冲功率应用技术。

关键词： Aging   Silicon carbide   Resistance   MOSFET   Logic gates   Junctions   Wires   Aging levels   junction temperature   reliability   SiC MOSFETs   state evaluating  

摘要： The junction temperature and aging levels are critical factors contributing to power device failures. Existing methods commonly employ electrical parameters as indicators for their evaluation. However, these indicators are influenced by both the junction temperature and aging level, making them effective only when one factor is known, which is unsuitable for industrial applications. To address this issue, a decoupled evaluation method is proposed for the junction temperature and the aging level of SiC MOSFETs. The drain-source ON-state resistance and gate threshold voltage are utilized as two evaluation features while considering the junction temperature and aging levels as two separate targets. First, the relationships between these targets and features are analyzed based on mechanisms, revealing that each target can be mathematically decoupled from these two features. Second, the feature-target functions are obtained through Gaussian process regression (GPR) using training data sets derived from a power cycle (PC) accelerated aging test. Finally, a decoupled evaluating strategy is proposed, which is experimentally validated. The experimental results demonstrate that the proposed method exhibits accuracy and robustness compared to conventional methods, which are accurate only in specific cases with unstable performance.