课程文献中心 更多>>

关键词： Cryogenics   Temperature distribution   Resistors   Quantum computing   Logic gates   Threshold voltage   MOSFET   Body effect   cryogenic CMOS (cryo-CMOS)   DTMOS   extreme environment   MOS-based   quantum computing   voltage references  

摘要： This article presents a family of sub-1-V, fully-CMOS voltage references adopting MOS devices in weak inversion to achieve continuous operation from room temperature (RT) down to cryogenic temperatures. Their accuracy limitations due to curvature, body effect, and mismatch are investigated and experimentally validated. Implemented in 40-nm CMOS, the references show a line regulation better than 2.7%/V from a supply as low as 0.99 V. By applying dynamic element matching (DEM) techniques, a spread of 1.2% (3 sigma ) from 4.2 to 300 K can be achieved, resulting in a temperature coefficient (TC) of 111 ppm/K. As the first significant statistical characterization extending down to cryogenic temperatures, the results demonstrate the ability of the proposed architectures to work under cryogenic harsh environments, such as space-and quantum-computing applications.

关键词： power MOSFET   semiconductor device reliability  

摘要： Different methods have been developed to predict power devices' remaining useful life (RUL). The existing methods need to specify the failure thresholds corresponding to failure precursors of power devices based on historical data. However, there might be heterogeneity in failure threshold between different devices despite being from the same batch, which can severely affect the RUL prediction performance. Aiming at this problem, this article proposes an RUL prediction method based on the non-linear Wiener process considering the failure threshold uncertainty. To incorporate the failure threshold uncertainty into the RUL prediction, the truncated normal distribution is employed to characterize this uncertainty. The maximum-likelihood estimation method is used to estimate the model parameters based on the historical degradation data. Then, the parameters can be dynamically updated by the Bayesian paradigm each time a new piece of condition monitoring (CM) data of the interested device in service is observed. This makes the predicted RUL dependent on the real-time health conditions of the interested device in service. The effectiveness of the proposed method is validated with the power cycling testing results of SiC MOSFETs. Experimental results reveal that the proposed method can reduce the prediction error by 10.273%. This article proposes an RUL prediction method based on non-linear Wiener process considering the uncertainty of failure threshold, which can predict the joint PDF of remaining useful life (RUL) and failure threshold of the interested device in service in real-time. And the proposed method is applied to a practical case of SiC MOSFET to demonstrate its effectiveness and ***

关键词： MOSFETs   Radiation effects   Solid-state detectors  

摘要： The response of commercial-off-the-shelf CD4007 p-channel MOSFET exposed to 60Co radiation under switchedbias conditions is studied by real time monitoring the threshold voltage evolution with accumulated dose. The possibility to employ switched-bias techniques to recover threshold voltage is demonstrated. As reported for other devices, non-monotonic responses are observed. A physics-based numerical model that takes into account both charge buildup within the oxide and generation of interface traps is employed to reproduce the experimental results. The implications for dosimetry are discussed.

关键词： Resonant inverters   RLC circuits   Logic gates   Gate drivers   MOSFET   Switching circuits   Voltage   Class E resonant inverter   gallium nitride high electron mobility transistor (GaN-HEMT)   LTspice   resonant gate driver circuit (RGDC)   zero voltage switching (ZVS)  

摘要： The class E resonant inverter is commonly used for various applications where low power and high frequency are needed. To investigate the performance of a class E resonant inverter, a comprehensive examination of the resonant gate driver circuits (RGDCs) is presented. In this work, a modified RGDC is implemented to drive the gallium nitride high electron mobility transistor (GaN-HEMT) of the class E resonant inverter. An analytical study of modified RGDC is carried out and compared with a conventional totem pole driver circuit. The simulation studies are conducted using the LTspice version XVII simulation software to observe the performance of both the driver circuits, i.e., the totem pole RGDC and the modified RGDC. The experimental testbed is set up for a modified RGDC drive GaN-HEMT-based class E resonant inverter to verify the theoretical as well as simulation findings. Further, the power losses are calculated by measuring the required parameters and efficiency curves are plotted by varying the load. The overall efficiency of the system, i.e., modified RGDC-based class E resonant inverter is found to be 95.42% at the optimal load resistance, R-L = 14.42 ohm.

关键词： SRAM cells   Layout   Transistors   MOSFET   Digital audio players   Radiation hardening (electronics)   Transient analysis   SRAM   radiation-hardened-by-design (RHBD)   single node upset (SNU)   single-event multi-node upset (SEMNU)   layout harden  

摘要： The node upset may occur in the memory cell if the charged particle from cosmos rays or packaging materials strikes the integrated circuit. Radiation-hardened-by-design (RHBD) techniques introduce redundant transistors in the SRAM cell to improve its ability of recovering from the undesired node upset. However, the extra redundant transistors may increase the number of sensitive nodes in the SRAM cell, which decreases its capability of node-upset tolerance in turn. This work proposes an RHBD 14T SRAM cell and an RHBD 16T SRAM cell. Both the proposed SRAM cells only have two sensitive nodes. The proposed SRAM cells are able to recover from all the SNU cases. The layout harden technique is used to protect the proposed cells from SEMNU, and the blank of the hardened layout is reused so the proposed 14T and 16T SRAM cells consume the same area. Although the proposed cells have more transistors, the hardened layout areas of NS-10T/ PS-10T/ RHD-12T/ RHBD-10T/ RHBD-10T[VLSI]/ QUCCE-12T are respectively 1.78x/ 1.78x/ 1.83x/ 1.78x/ 1.78x/ 1.99x larger than that of the proposed cells. The reason is that the layout harden technique is easier to be applied to the proposed cells because they only have two sensitive nodes.

关键词： 数字滤波器   现场可编程门阵列  

ISBN: (纸本)9787121485381

摘要： 本书以Xilinx公司的Artix-7系列FPGA器件为开发平台，以MATLAB及Verilog HDL语言为开发工具，阐述数字滤波器的FPGA实现原理、结构、方法及仿真测试过程，并通过大量工程实例分析使用FPGA实现滤波器的具体技术细节，主要包括FIR滤波器、IIR滤波器、多速率滤波器、自适应滤波器、变换域滤波器、DPSK调制解调等内容。

关键词： Inductance   Layout   Multichip modules   Silicon carbide   MOSFET   Couplings   Switches   multichip power module (MCPM)   parasitic inductance   silicon carbide (SiC) MOSFET  

摘要： In this article, an innovative layout is introduced to reduce the stray inductance of the multichip power modules (MCPMs) through reverse coupling of current in parallel power loops, which effectively cancels out mutual inductance. A half-bridge silicon carbide (SiC) MOSFET power module was designed based on this novel layout. The fabricated SiC power module was experimentally validated, demonstrating a measured stray inductance of about 3.5 nH. Experimental results confirmed that the proposed module outperforms counterpart commercial SiC MOSFET power modules in terms of turn-off overshoot voltage and switching loss reduction, highlighting the advantage of the reverse-coupling current approach in enhancing power module performance. The principle of enhancing negative mutual inductance and dynamic current sharing in circuits through the reverse coupling parallel loops is discussed.

关键词： Induction heating  

摘要： In this study, a single-phase induction heating (IH)-applied water heating system with Silicon Carbide (SiC) MOSFET-based single-ended high frequency inverter is presented for home and consumer appliances. The proposed system exhibits high thermal response for fluid heating due to the ferromagnetic/non-ferromagnetic materials and work-coil structure. They which are suitably designed for electric heating as well as the newly-developed high-frequency inverter. Thus, efficient electric-thermal energy conversion is expected. This is competitive for conventional gas-based fluid heating. The performances of the proposed fluid IH system are demonstrated with a 5-kW prototype together with the relevant analysis and design. Subsequently, the feasibility is evaluated based on practical applications. © 2024 The Institute of Electrical Engineers of Japan.

关键词： MOSFET   Substrates   Germanium   Etching   Fabrication   Performance evaluation   Surface roughness   (111)-oriented substrate   electron mobility   extremely thin body   Ge-on-insulator (GOI)   germanium   layer transfer   nMOSFET  

摘要： The effectiveness of (111)-oriented substrates with a flipped method, in which layer transfer is performed again after the Smart-Cut process, has been proven to significantly enhance the performance of extremely thin body Ge-on-insulator (GOI) nMOSFETs. This superior performance is attributed to the markedly improved quality of the GOI film and the interface with a buried oxide layer achieved through the flip process. A record-thin (111) GOI nMOSFET of 2.1 nm is achieved, exhibiting low SSmin of 70 mV/dec and a high ON-OFF ratio of 1.1 x 10(7)at Vg = 2 V. Additionally, the electron mobility of 168 +/- 34 cm(2)/Vs and 60 +/- 12 cm(2)/Vs are obtained for (111) GOI nMOSFET swith the channel thickness of 6.1 and 2.7 nm, *** performance improvement is also observed in (100)-oriented flipped Smart-Cut GOI, while (111)-oriented substrates exhibit significantly higher electron mobility and ON-OFF ratio over all the channel thicknesses. This work demonstrates the potential of ETB (111) Ge nMOSFETs as a substitute channel material for future 3-D sequential complementary FETs (CFETs).

关键词： MOSFET   Silicon carbide   Reliability   Integrated circuit reliability   Logic gates   Layout   Degradation   parallel   parameter mismatch   reliability   short circuit   SiC MOSFET  

摘要： Uneven electro-thermal conditions between parallel-connected devices can reduce the overall reliability of the power electronics systems, particularly during extreme cases such as short circuit. The current distribution between parallel devices is dynamically regulated during the transient and the degradation of devices is intertwined in the long run. To better understand the evolving patterns in the parallel configuration and to compare differences among various device structures, repetitive short circuit tests were conducted on planar, symmetrical double-trench, and asymmetrical trench SiC MOSFETs. Technology computer-aided design (TCAD) models were employed to analyze the evolution of current density and temperature profile between parallel devices. Test results indicate that the switching speed difference caused by gate resistance (R-g) mismatch leads to the asynchronous degradation of asymmetrical trench devices. The decreased threshold voltage (V-th) induce higher short circuit energy (E-sc), forming a positive feedback for degradation. Besides, even if the current is dynamically shared between parallel SiC MOSFETs under different case temperature (T-case), the initial temperature has a key impact on short-circuit reliability over E-sc.