摘要:
In this article, we present a method to analytically model the subthreshold swing (SS) in bulk MOSFET compact models down to cryogenic temperatures by incorporating interface states into the surface potential equation (SPE). The impact of the interface states is captured by a gate voltage shift. To derive a close-form solution, the shift is first calculated for the actively charging region of the gate voltage using a linear approximation of the interface states. The shift is then smoothly clamped to zero at lower gate voltages, where the interface states are empty, and to a saturated value at higher gate voltages, where the interface states are fully charged. This approach differs from the empirical or behavioral methods typically used in compact models. The method effectively models the SS and its saturation at cryogenic temperatures and has been validated with measurement data down to 4.2 K in an n-channel Si MOSFET from a 28-nm bulk CMOS process for both linear and saturation regions. This method does not account for the band-tail effect, and self-heating is not considered, as it is negligible in the subthreshold region. The approach is straightforward and can be easily applied to other types of MOSFETs.
摘要:
为降低配电变压器潜在风险,确保故障风险控制性能,设计基于MBD(Model Based Definition)技术的配电变压器潜在故障风险控制系统。使用MBD技术描述系统主电路,根据模块化原则将系统划分为表示层、控制层、业务逻辑层和信息访问层,运用B/S结构实现系统硬件操作。使用Java开发语言,利用在线监测、风险评价指标、故障风险控制等板块搭建系统软件,引入事故链概念,计算配电变压器失稳及支路过载故障后果,根据核心决策节点,完成潜在故障风险控制。实验结果表明,设计系统具有较好的故障风险控制性能,有效降低配电变压器潜在风险,减小潜在故障风险控制延时。