摘要:
Wide and ultrawide bandgap semiconductors demonstrate exceptional performance due to their large energy bandgap, which offers distinctive advantages such as enhanced efficiency, drift velocity, increased voltage blocking, and high-frequency switching. These characteristics make such semiconductors essential for advancing electronic technology. Among such materials, diamond is particularly distinguished for its wide bandgap, superior thermal conductivity, and high electron mobility. These properties enable diamond to perform exceptionally well in challenging environments where traditional materials may fail. Additionally, its ability to operate at elevated temperatures and voltages renders diamond-based devices suitable for a range of applications, including high-power electronics and high-frequency RF systems.
The hydrogen-terminated Metal-Oxide Field Effect Transistor (HD-MOSFET) is a highly promising and widely studied diamond device. In this device, hydrogen termination is used to induce a two-dimensional hole gas (2DHG) as high as 1014 cm-2, resulting in high drain current.
Our study investigates the Hydrogen-Terminated Diamond Metal-Oxide Field-Effect Transistor (HD-MOSFET) using TCAD Sentaurus to gain insights into the thermal performance and operational limits of diamond-based semiconductor devices. In this study, we examine the trapping effect and temperature-dependent behavior of the HD-MOSFET. Furthermore, our analysis compares the effects of temperature and interface traps on the threshold voltage (Vth), channel mobility (µch), and on-state resistance (RON) within a temperature range of 300 K to 500 K.