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关键词： IGBT   Stress performance   Multiphysics coupling model   Thermal-mechanical-electromagnetic   Interaction mechanisms  

摘要： The press-pack Insulated Gate Bipolar Transistor (IGBT) is a critical power device in high-power electronic equipment and widely employed in flexible direct current (DC) transmission systems. Electrothermal stress fatigue are the leading cause of IGBT failures in engineering applications. However, previous studies mainly focused on the stress analysis from individual mechanical field in IGBT, thus the coupling effects of thermalmechanical-electromagnetic multiphysics fields on stress analysis are ignored, moreover, the thermal effect includes not only Joule heating but also electromagnetic losses, which lead to the interaction mechanisms on stress from various fields are currently unclear. In this paper, a novelty model of the IGBT considering mechanical field, thermal field, and electromagnetic field is proposed to comprehensively understand their inherent interaction mechanisms. Detailly, the paper explores the interaction mechanisms between fields by gradually coupling different fields. As a results, compared to the single mechanical field model, after thermal field is coupled into the mechanical field, the maximum stress steep rise to 26.2 MPa from 12.8 MPa. The electromagnetic field is further coupled into the mechanical-thermal fields, and the maximum temperature is increased by 6.2 %, which further leads to a 12.9 % increase in the maximum stress of mechanical field. The multiphysics coupling model has significantly narrowed the gap with the experimental results, the deviation in maximum stress has been reduced from 55.33 % in individual mechanical field to 2 % in Thermal-Mechanical-Electromagnetic multiphysics fields. The results indicate that the sequential coupling of thermal and electromagnetic fields significantly enhances the accuracy of stress analysis of IGBT.

关键词： Insulated gate bipolar transistors   Analytical models   Switches   Capacitance   Voltage   Logic gates   Transient analysis   P-i-n diodes   Accuracy   Load modeling   Field-stop (FS) insulated gate bipolar transistor (IGBT)   IGBT analytical modeling   switching transient   temperature-dependent model  

摘要： The field-stop (FS) insulated gate bipolar transistors (IGBTs) (FS IGBTs) become a mainstay in the IGBT market for medium and high-power applications nowadays. The wide application of FS IGBTs led to a great desire for fast and accurate simulation of the device. In this article, an analytical transient model is proposed for FS IGBT. Based on the improved understanding of the switching behavior of FS IGBT, complete analytical expressions of V-ce and I-c at switching transient are derived. The pivotal device characteristics depending on the junction temperature T-j1 of low-side IGBT and T-j2 of high-side IGBT are identified and modeled. To extract model parameters, experimental and datasheet-driven parameter extraction methods are proposed. Double-pulse tests are performed on 600 V and 1200 V-rated FS IGBTs under various test conditions. The simulated and experimental results are compared and good agreement is obtained.

关键词： Wire   Insulated gate bipolar transistors   Mathematical models   Monitoring   Stress   Strain   Force   Copper   Transient analysis   Power electronics   Bonding wire lift-off   condition monitoring   electromagnetic voiceprint (EMVP)   influencing factor mechanism model   insulated gate bipolar transistor (IGBT)   solder aging  

摘要： State monitoring technology is essential for the fault prognostics and health management of power electronic devices. Electromagnetic voiceprint (EMVP) signals, produced during the switching transients of these devices, carry substantial information about their health status. In recent years, EMVP signals have gained attention as a promising state monitoring indicator for power electronic devices. However, the mechanism by which the health status of a device affects its EMVP signals remains unclear, limiting their use in health monitoring. This article investigates the impact of insulated gate bipolar transistor (IGBT) health status on EMVP signals and develops a mechanistic model to illustrate the influence of bond wire lift-off and solder aging on EMVP signals. Simulation models were developed to analyze the impact of both scenarios on EMVP signals. Typical features are proposed to characterize the relationship between IGBT health status and EMVP signal. Experimental validation supports the theoretical framework and simulation results. The research provides a theoretical foundation for the development of reliability evaluation methods based on EMVP.

关键词： Insulated gate bipolar transistors   Temperature measurement   Heating systems   Sensors   Monitoring   Logic gates   Semiconductor device measurement   Optical fibers   Packaging   Junction temperature   maximum temperature   online monitoring   press-pack IGBT   temperature sensors   temperature sensors  

摘要： Press-pack insulated gate bipolar transistor (PP IGBT) junction temperature online monitoring is of vital importance for the health management of high-voltage power conversion systems. The tradition methods destroy the packaging component and are difficult to obtain the maximum temperature of PP IGBT. A temperature sensor integrated method for directly obtaining the maximum temperature of PP IGBT chip is proposed in this article. Due to the uneven temperature distribution on the surface of the chip, the maximum temperature measurement depends on the mounting positions of temperature sensors. Three mounting positions of temperature sensors including the gap between gate pad and emitter molybdenum (Mo), the emitter Mo, and the gate pogo pin are reasonably proposed by theory analysis. The finite element simulations and constant current source tests show that as the clamping force increases, the maximum temperature point drifts from the center of the emitter surface to the gap. The maximum temperature of PP IGBT chip is increased after the emitter Mo is grooved. The mounting position located at the head of gate pogo pin avoids the influence of stress on the temperature sensor. The feasibility of the proposed method is verified based on a half-bridge inverter.

关键词： 电器设备   变频器   干扰  

摘要： 变频器是一类控制电机运行速度的电子设备,变频器也称变频调速器,变频器能够将电网中的固定电压与频率转换为可调节状态,以此更为方便地对电机的速度、功率以及运行方式等展开控制。变频器具备节能、增加电机寿命以及提升生产效率等优势,因此已经广泛应用到各类电气设备当中。但是在使用阶段很多电气设备变频器会受到干扰。针对这一问题,本文首先对变频器的工作原理展开分析,以此探究变频器电子干扰产生原因,同时结合实际案例,从接地、布线等方面入手论述电气设备变频器干扰问题解决办法,以此为干扰问题的解决提供参考。

关键词： Triply periodic minimal surfaces   IGBT   Simulation   Energy dissipation   thermal analysis   Heat   conduction   liquid-cooled   Cooling   Insulated-gate bipolar transistors   electronic cooling   Temperature   forced convection   Simulation results   Flow (Dynamics)   Heat transfer   Heat sinks   porous media   TPMS structure   Diamonds   Pressure   Pressure drop   heat and mass transfer  

摘要： In this article, we propose a liquid-cooled heat sink model utilizing a triple periodic minimal surface (TPMS) structure for insulated gate bipolar transistor (IGBT) modules. By using parametric modeling softwarentopology, we establish the following three TPMS structures: Schwarz P, Gyroid, and Diamond. Thermal simulation analysis is conducted on the radiator model usingansys fluent. The optimal structural parameters are determined to ensure effective heat dissipation while preventing excessive pump power consumption due to inappropriate inlet flowrates. Simulation results demonstrate that the liquid-cooled radiator with the TPMS structure outperforms conventional radiators in heat transfer efficiency, albeit with higher inlet and outlet pressure drops. Among the TPMS-structured radiators, the Schwarz P configuration exhibits the lowest pressure drop, approximately 20% less than the remaining two, offering superior thermal management advantages.

关键词： Loop thermosyphon   Evaporator chamber thickness   Filling ratio   Start-up characteristics   Intermittent dry-up  

摘要： In this paper, experimental studies and visualization were carried out on a loop thermosyphon with a flat evaporator having different evaporator chamber thicknesses (2mm, 7 mm, 14 mm, 20 mm) and filling ratios (20 %-70 %) for IGBT (Insulated Gate Bipolar Transistor) cooling, and the start-up characteristics, heat transfer performance, and intermittent dry-up characteristics were analyzed. The experimental results show that with the increase of the evaporator chamber thickness, the liquid filling ratio required for successful start-up decreases gradually. The whole start-up process can be divided into three stages: boiling stage, dry-up stage, and recharging stage. When H = 2 mm and FR=37 %, the minimum Rt is 0.047K/W and the maximum hevap is 4027W/m2K in all experimental conditions. The 14 mm evaporator chamber thickness shows the best temperature uniformity due to its alleviation of the intermittent dry-up. The intermittent dry-up was observed in the 2 mm and 7 mm evaporator chambers, manifested as fluctuations in pressure, temperature, and mass flow rate. It is because the backflow liquid and the rising gas form a blockage in the vapor line, and increasing the filling ratio and the thickness of the evaporator chamber can avoid the occurrence of this phenomenon. The research results provide theoretical guidance for the design of evaporators used in IGBT heat dissipation.

关键词： 电气设备   自动化控制   PLC技术   变频器  

摘要： 随着工业自动化技术的不断发展,电气设备自动化控制已经成为提升生产效率、优化资源配置的重要手段。在众多自动化控制技术中,PLC和变频器作为核心设备,广泛应用于各种工业领域。PLC因其高度的灵活性和可靠性被广泛应用于过程控制和设备控制中,而变频器则以其高效的调速能力和节能效果在驱动系统中发挥着重要作用。PLC和变频器的结合应用,不仅提升了生产过程的自动化水平,还显著提高了设备的运行效率和能源利用率。

关键词： Insulated gate bipolar transistors (IGBT)  

摘要： This study deals with the development of a wide-frequency-band characterization for failure analysis of power modules, focusing on a specific IGBT packaging. It is highlighted that different characteristics of the IGBT and the packaging can be distinguished depending on the frequency band analyzed, enabling the detection of potential failure modes. Particularly, for the power bond-wire lift-off mechanism, the paper emphasizes the importance of considering high-frequency analysis above 200 MHz. It is enabled through the definition of a failure indicator, demonstrating the ability to highlight partial failures as well as to localize them. © 2025 Elsevier Ltd

关键词： Insulated gate bipolar transistor (IGBT)   Failure mechanism   convolutional neural   network and long short-term memory (CNN-LSTM)   Degradation prediction  

摘要： The reliability of insulated gate bipolar transistor (IGBT) directly affects the safe and stable operation of power electronic system. Based on the IGBT accelerated aging open data set provided by NASA PCoE, the peak collectoremitter voltage during IGBT shutdown is selected as the failure characteristic parameter. Convolutional neural network and long short-term memory network (CNN-LSTM) model is used to predict IGBT failure precursor parameters and estimate the degradation behavior of IGBT modules in this paper. The sliding window method is employed to construct input and output data. When the window width is 3, the prediction model works best. By running the proposed model many times, the average values of MAPE, MAE, MSE and RMSE of the CNN-LSTM network proposed in this paper are 0.0038,0.0468,0.0059,0.0600, which have higher accuracy than other networks. At the same time, the four indicators of the CNN-LSTM model are the most stable and the prediction credibility is higher through the box plot analysis. This prediction method provides a new idea for IGBT degradation behavior prediction.