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关键词： 转矩控制   双稳速控制模型   自由功能块  

摘要： 介绍了炼铁冶金高炉探尺传动系统变频改造,在探尺传统控制工艺基础上利用6SE70变频器的自由功能块,构建了基于双稳速控制模型的转矩控制方式,以此进行变频调速,并简要介绍了变频器其他参数的设置。

关键词： 智能四驱   侧向支撑   电池电量   双横臂   矢量控制   沉浸式   五连杆   轴距  

摘要： 售价:33.99万~41.99万元3.2 m轴距“会客厅”电池电量为108.73 kWh,CLTC纯电续航达650 km。在操控方面,前双横臂+后五连杆全铝底盘,提供更好的侧向支撑,在加速和转弯等;搭载的扭矩矢量控制智能四驱系统,前后电机功率均达到160 kW,并可0-100%智能无级调。一、二排均配备按摩、加热、通风功能和丹拿音响,创造沉浸式的舒享音乐座舱。

关键词： 煤矿   胶带输送机   变频器   485通信   抗干扰措施  

摘要： 胶带输送机是矿井煤炭运输系统的主要载体,低故障率、高可靠性是胶带输送机选择的重要指标,直接决定着运输系统设备安全稳定、连续长周期运行水平的高低。胶带输送机采用变频器驱动方式有效保证运输系统安全可靠运行。通过对井下处理巷道胶带输送机变频器主从通信故障情况的分析,以提高变频器抗干扰性能为核心,提出了各种造成信号干扰的类型和方式以及现场的处理措施,重点结合现场处理措施进行了理论分析指导,以提高对变频器抗电磁干扰措施的认识和重视程度,对于胶带输送机变频器故障处理具有重要的指导意义。

关键词： IGBT   avalanche   current filament   robustness   SOA  

摘要： With the increase in voltage level and current capacity of the insulated gate bipolar transistor (IGBT), the avalanche effect has become an important factor limiting the safe operating area (SOA) of the device. The hole injection into the p/n junction on the backside of the IGBT after avalanche is the main feature that distinguishes the avalanche effect from other devices. In this paper, the avalanche breakdown characteristics of IGBT and the nature of current filament are investigated using theoretical analysis and numerical simulation, and the underlying physical mechanism controlling the nature of current filaments is revealed. The results show that the hole injection on the backside of the IGBT leads to an additional negative differential resistance (NDR) branch on the avalanche breakdown curve. The device's common-base current gain, alpha pnp, is a crucial factor in determining the current filament. As alpha pnp increases, the avalanche-induced current filament becomes stronger and slower, resulting in weaker avalanche robustness of the device.

关键词： Monitoring   Wires   Multichip modules   Logic gates   Temperature sensors   Insulated gate bipolar transistors   Delays   Auxiliary emitter voltage   bond wires lift-off   multichip IGBT modules   on-line monitoring   turn-on delay time  

摘要： Power semiconductor chips are used in parallel within the module to achieve a specific current capacity and power level. One of the most common failure modes of power modules is bond wire fatigue. Monitoring the health conditions of the chip is a cost-effective method to improve the reliability of the power module. This article uses auxiliary emitter voltage to monitor the chip open-circuit failure caused by all bond wires lift-off. The impact of chip failure on the switching process is analyzed, and four electrical parameters are extracted as health monitoring parameters (HMPs). The dependence of proposed HMPs on operating conditions such as gate resistance, bus voltage, load current, and junction temperature are investigated by experiments. The comparative analysis of the four HMPs shows that the turn-on delay time t(don) has high sensitivity and the strongest anti-interference ability. Finally, an on-line monitoring circuit for in situ detection of chip failures in multichip IGBT modules is designed. The circuit can be plug-and-play or integrated into the gate driver. The results show that a reduction of 276 ns in the measured t(don) for each IGBT chip failure.

关键词： Voltage   Insulated gate bipolar transistors   Doping   Silicon carbide   Logic gates   Silicon   High-voltage techniques   RC-IGBT   collector-side injection-enhanced   reverse conducting voltage   reverse recovery  

摘要： A novel structure of Collector-side Injection-Enhanced 4H-SiC Reverse-Conducting IGBT (CIE-RC-IGBT) is proposed by introducing a high-resistance P-bottom region on the collector side. The operation mechanism of collector-side injection enhancement and its simulation verification are presented. During the reverse conduction of CIE-RC-IGBT, the CIE effect increases the carrier concentration on the collector side, resulting in a much lower reverse conducting voltage (V-F) . Simulation results show that the VF of CIE-RC-IGBT is 4.04V, approximately 29.5% lower than the 5.73V of Con-RC-IGBT. The new CIE structure does not sacrifice other operation, such as forward conduction, turn off, and blocking characteristics, except for a slight increase in reverse recovery current.

关键词： IGBT drive circuit   gate voltage boosting technology   temperature rise   IGBT loss   traction converter  

摘要： Under certain circumstances, a high-speed railway may require constant acceleration or emergency braking, in which case the inverter may experience short-term overload conditions and the current passing through the IGBT will go beyond the rated design tolerance. Under overload conditions, the IGBT loss will increase instantly, raising the power semiconductor device's junction temperature in the process. This research examines the boosting-gate-voltage-driven IGBT control technology. It increases the gate drive voltage and the IGBT current capacity and decreases the conduction voltage drop of IGBT under short-term overload conditions, reducing the instantaneous loss and temperature rise undulation of IGBT. The working characteristics of IGBT devices are studied, and the influence of gate drive voltage on device loss and temperature rise fluctuations is analyzed. Based on the emergency acceleration and brake conditions of the actual train operation, the short-term overload characteristics of the inverter are analyzed. The optimization analysis of the boosting gate voltage under emergency conditions is carried out, and the IGBT drive circuit with gate voltage pumping function is designed. The effectiveness of the driving circuit is verified through PSpice simulation and actual switching characteristic test. According to the analysis of experimental data, it can be verified that increasing the gate voltage technology can reduce IGBT losses.

关键词： finite element method (FEM)   Gaussian process regression (GPR)   insulated gate bipolar transistors (IGBTs)   machine learning   power electronics reliability   solder voids  

摘要： This study investigates the thermal behavior of Insulated Gate Bipolar Transistors (IGBTs) with a focus on the influence of solder voids within the device. Utilizing a combination of Finite Element Method (FEM) simulations, X-ray imaging, and SEM-EDX analysis, we accurately modeled the internal structure of IGBTs to assess the impact of void characteristics on thermal resistance. The findings reveal that the presence and characteristics of solder voids-particularly their size, number, and distribution-significantly affect the thermal resistance of IGBT devices. Experimental measurements validate the FEM model's accuracy, confirming that voids disrupt the heat flow path, which can lead to increased thermal resistance and potential device failure. Five regression models, including Gaussian process regression (GPR) and neural networks, were employed to predict the thermal resistance based on void characteristics, with the GPR models demonstrating superior performance. The optimal GPR RQ model consistently provided accurate predictions with an RMSE of 0.0050 and R2 of 0.9728. Using the void percentage as the only input parameter for the regression models significantly impacted the prediction accuracy, showing the importance of the void extraction method. This study shows the necessity of minimizing solder voids and offers a robust methodological framework for a better prediction of the reliability of IGBTs.

关键词： Insulated gate bipolar transistors   Impedance   Circuit faults   Reflection   Fault diagnosis   Time-domain analysis   Power cables   Characteristic impedance identification   fault diagnosis   IGBT   STDR/SSTDR   time-domain reflection signal  

摘要： The malfunction of an insulated gate bipolar transistor (IGBT) device can result in the failure and damage of both itself and the system in which it is installed, and various types of faults in the device typically lead to changes in its impedance characteristics. This article leverages the advantages of travelling wave reflectometry in the field of identifying characteristic impedance parameters of devices, and conducts device-level research on the transmission and reflection response characteristics of sequence/spread spectrum time domain reflectometry (STDR/SSTDR) signals for IGBT. On the one hand, based on a clear understanding of the aliasing patterns and their impacts on reflected signals, this article proposes a signal pre-processing algorithm using a time-domain signal transmission analytical model to reduce identification errors introduced by aliasing phenomena. On the other hand, based on establishing the mapping relationship between the characteristic parameters of various IGBTs and their different fault states, this article proposes an IGBT fault diagnosis method based on characteristic parameters identification of time-domain reflection signals. Compared to traditional methods, the proposed method can achieve nonintrusive fault detection for both IGBT and antiparallel diode simultaneously, and has the flexibility to adjust the testing conditions. Finally, relevant experiments were conducted to verify the proposed method, and the expected results were achieved.

关键词： Insulated Gate Bipolar Transistor (IGBT)   Semi-Insulating POly-crystalline Silicon (SIPOS)   Switching Loss  

摘要： A novel insulated gate bipolar transistor with Semi-Insulated POly Silicon (SIPOS) is presented in this paper and analyzed through TCAD simulation. In the off state, the SIPOS-IGBT can obtain a uniform electric field distribution, which enables a thinner drift region under the same breakdown voltage. In the on state, an electron accumulation layer is formed along the SIPOS, which can increase the injection level of the "PiN region" in the device, and the carrier concentration in the drift region is also increased due to the charge balance effect. Moreover, the SIPOS-IGBT can achieve a quick and thorough depletion in the drift region during the turn-off transient, which can greatly reduce the turn-off loss of the SIPOS-IGBT. These advantages improve the tradeoff between the conduction and switching losses. According to the simulation results, the SIPOS-IGBT obtained a 58% lower turn loss than that of a field-stop (FS) IGBT and 30% lower than an HK-IGBT with the same on-state voltage.