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关键词： Logic gates   Insulated gate bipolar transistors   Gate drivers   Control systems   Switching circuits   Voltage control   Delays   Complex programmable logic device (CPLD)   field programmable gate array (FPGA)   insulated-gate bipolar transistor (IGBT)   intelligent gate driver   short-circuit (SC) protection  

摘要： In the realm of power electronics systems, gate drive and protection strategies are of paramount importance, bolstering reliability, efficiency, and safety. This article provides a comprehensive overview of existing methods for gate drive and short-circuit protection of insulated-gate bipolar transistor (IGBT), further elucidating the latest advancements with intelligent features. The structure of an intelligent driver with the trend of integrating more sophisticated features is presented first, followed by descriptions of its functions, such as overshoot optimization, electrical isolation, and sensor monitoring. The methods for gate drive are discussed and compared, particularly emphasizing the benefits of self-adaptive gate drive in reducing losses and overshoot. Subsequently, different strategies for short-circuit detection and shutdown protection are explored, complemented by discussions on recent short-circuit protection techniques. Finally, the promising approaches for future works are recommended. This review is intended to provide practical solutions for the design and development of IGBT operating circuits in the existing and emerging applications.

关键词： SiC IGBT   JFET width   Mechanism   Conduction characteristic  

摘要： In this article, the mechanism analysis of the impact of the LJFET on the conduction characteristic of SiC IGBT is verified through simulation results and actual tests. Planar p-channel SiC IGBTs with different LJFET including 3.2 mu m, 10 mu m, and 12 mu m are fabricated and tested for trend verification, and test results are fit with simulation. Under the same conditions, when the LJFET increases from 3 mu m to 10 mu m, the conduction characteristic is relatively improved. Moreover, the forward voltage drop degenerates when the LJFET increases from 10 mu m to 12 mu m. When the gate voltage is -20 V, the forward voltage drop of the p-channel SiC IGBT at the current density of 100 A/cm2 is -10.20 V. At the same time, the breakdown voltage reaches 10 kV.

关键词： Small Wind Turbines   Experimental platform   Permanent Magnet Synchronous Generator(PMSG)   Machine Characterization   IGBT Power Stack   DC-DC Boost Converter  

摘要： Wind energy technologies have emerged as the predominant renewable energy source within the framework of present-day electric power systems. Their design process, aligned with foundational theories, ought to be precision -engineered and systematized to fully maximize the potential of this energy source. This study presents a platform as solution designed and built to characterize and assess Small Wind Turbines (SWT), based on free software and open hardware. Additionally, the developed methodology step-by-step guide is disclosed. The characterization is based on the use of Permanent -Magnet Synchronous Generator (PMSG) as machine widely adopted in Wind Energy Conversion System (WECS) less than 100 kW. The core theoretical background is detailed to confirm the accuracy of the parameters procedures acquisitions. Poles number, machine design constant, armature reactance, synchronous reactance, and power -dynamic characteristic related to WECS are determined. This laboratory set-up is composed of variable industrial fan, rectifier, boost converter and a bidirectional Direct -Current (DC) source as a battery emulator. All components have been assembled within the laboratory environment using commercially available elements. Low implementation cost and versatile methods determine the real input in practice of this platform. To validate the effectiveness for any SWT, a real one is tested, and every parameter proposed is calculated.

关键词： Wires   Insulated gate bipolar transistors   Aging   Inductance   Monitoring   Junctions   Voltage measurement   Bond wire aging   frequency characteristics   IGBT module   online monitoring   ringing  

摘要： This paper introduces a novel online aging monitoring method for bond wires in IGBT modules based on voltage ringing frequency characteristics. The synchronous Buck converter was selected as the IGBT module test system. The influence of the aging degree of upper bridge arm IGBT module on the voltage ringing peak frequency characteristics of the lower bridge arm IGBT module is studied during the switching transient. Considering the influence of junction temperature, power loop wires inductance and driving resistance on the ringing frequency characteristics, this paper measured the standard ringing frequency under the coupling conditions of each factor. Then a standard database under different working conditions is constructed, and the database is used as a criterion to complete the monitoring task. Finally, the converter-level aging monitoring method of bond wires is realized which is non-invasive and real-time. The experimental results show that the proposed method does not need additional equipment, which reduces the complexity of monitoring circuit and has universal applicability.

关键词： Junctions   Temperature measurement   Insulated gate bipolar transistors   Predictive models   Reliability   Temperature sensors   Prediction algorithms   Improved sailfish optimization algorithm   insulated gate bipolar transistor   junction temperature prediction   support vector machine (SVM)  

摘要： This study improves the accuracy of junction temperature prediction, as the insulated gate bipolar transistor (IGBT) reliability is important for the safe operation of its working system due to junction temperature is limited in its actual performance and reliability. A model based on an improved sailfish optimization algorithm to optimize support vector machine (ISFO-SVM) is proposed to solve the problem that the junction temperature prediction accuracy is not high enough. The proposed algorithm is improved by adaptive nonlinear iterative factor, Le'vy flight and differential mutation strategy to optimize the support vector machine (SVM) internal parameters to predict junction temperature. The results indicate that ISFO-SVM performs better under the same evaluation indexes. The root mean squared error average value decreased by 67.189%, and the mean absolute percentage error average value decreased by 63.189%, compared with the sailfish optimization algorithm to optimize the SVM. The prediction error of ISFO-SVM is smaller and the error value is in the [-5 degree celsius, 5degree celsius] range accounting for 98.270% of the total test samples. ISFO-SVM has a higher fitting degree than the actual junction temperature and the R2 has reached 99.660%. The model predicts the junction temperature of IGBT modules and provides scientific guidance for system reliability evaluation to maintain safe and stable operation effectively.

关键词： CFD   IGBT   minichannels heat sink   thermal turbulence   V-shaped pin fin  

摘要： With the continuous advancements in new energy vehicle technology, the insulated gate bipolar transistor (IGBT) thermal properties have a direct impact on power system reliability. In this article, a minichannel heat sink with staggered V-shaped pin fins (SVPF) is investigated through both experimental and numerical approaches. Initially, the heat transfer performance of SVPF and conventional minichannel heat sink was analyzed using the CFD numerical simulation method. Subsequently, numerical and experimental validation was carried out by assessing the Nusselt number and turbulence characteristics of SVPF. Finally, an in-depth analysis was conducted to investigate the effects of SVPF geometric parameters on the turbulent characteristics and heat transfer performance of the minichannel heat sink. The results demonstrate that SVPF exhibits superior hydrothermal performance, which could maintain better heat transfer performance while simultaneously reducing the friction factor of minichannels. These findings provide valuable insights for the design of three-dimensional pin fins minichannels heat sink.

关键词： 静止变频器   SFC起动   非特征谐波   断续换相  

摘要： 静止变频器(Static Frequency Converter， SFC)在运输行业、电力行业、工业自动化、新能源行业应用广泛，已成为现代工业生产中重要的一环。然而，SFC驱动电机易引发电能质量问题，以抽水蓄能电站为例，SFC起动产生的谐波导致厂用电设备损坏或自动装置误动作，甚至谐波传递至上级电网，影响电网的安全稳定运行。针对SFC起动过程中的谐波问题，研究非特征谐波产生机理，建立考虑限流电抗器的SFC网侧电流精准数学模型，分析得出影响非特征谐波含量的主要因素，揭示断续换相过程、电机内部扰动和外部扰动过程对非特征谐波的普适性影响规律。最后，基于某抽水蓄能电站的实际参数搭建Matlab/Simulink仿真模型，结合现场测试结果，验证本文对抽水蓄能电站内部非特征谐波特性分析的正确性与准确性。

关键词： 大功率   IGBT   失效   机车   寿命预测  

摘要： IGBT是牵引系统最关键同时也是失效率较高的部件，其可靠性受路况、载重、温湿度等诸多因素影响，如何利用牵引变流器运行工况数据提取IGBT工作特性是一个关键性问题。本文提出一种针对机车牵引变流器的IGBT应用寿命预测方法，通过实时采集线路实际运行的工况及电气数据，在线梳理并计算得出IGBT器件的损耗、结温，利用在线式雨流算法对其热应力进行统计，以模拟现场工况条件的牵引变流器组件级加速寿命试验建立IGBT寿命模型，对IGBT的预期使用寿命进行评估，最后利用嵌入式软件和列车运行时的线路工况数据进行了验证。所提方法计算过程便捷、高效，具有较强的工程应用价值。

关键词： Timing circuits  

摘要： FS-IGBTs are widely used in various power applications due to their low conduction and low switching losses. However, as the cell pitch is further minimized, its high cell density induces high saturation current that deteriorates short-circuit ruggedness, which is essential for power applications such as welding machines and motor drives. In this paper, a 650V 75A FS-IGBT is designed and fabricated. By including dummy gate and emitter trench structures in the active gate and optimizing the layout of the three cell structures, the short-circuit characteristics of the device can be significantly improved. Verified by experimental tests, the device has both low saturation on-state voltage and strong short-circuit ruggedness. The fabricated FS-IGBT has a short-circuit withstand time of 10μs at room temperature and can withstand 5μs and 3μs at 100°C and 150°C respectively, which is up to the latest technology level of Infineon. © 2024, The Authors. All rights reserved.

关键词： 高压变频器   控制系统   电路   设计   应用  

摘要： 现如今,各个行业都广泛使用变频器,特别是在工业生产中,高压变频器是不可或缺的,它不仅具备转矩保护和过流保护功能,而且在节能降耗和自动化运行方面表现出色.基于此,本文以一种 6000V电压源型高压变频器为例,详细阐述了其控制系统、组成装置、主电路和功率单元电路的设计内容,并对高压变频器在某钢铁企业除尘风机改造项目中的应用效果进行了分析.研究表明,该高压变频器采用干式移相变压器,以减少谐波干扰和提升功率因数,并通过使用 5 级H桥功率单元实现电压叠加.