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关键词： Insulated gate bipolar transistors   Switches   Laser beams   Surface emitting lasers   Stress   Transient analysis   Accuracy   Sensors   Vibrations   Feature extraction   Insulated gate bipolar transistor (IGBT) bare dies   laser interferometric vibrometer   on-chip detection   switching mechanical wave  

摘要： Switching mechanical wave (SMW) effect has attracted extensive attention over the past few years owing to its broad application prospects in condition monitoring for insulated gate bipolar transistor (IGBT) devices. Nevertheless, current research focuses on an indirect approach of acoustic emission detection technology to implement the investigation of such phenomenon, which is not conducive to the mechanism revelation of SMW effect and the accurate extraction of its physical characteristics. Herein, an effective detection method based on laser interferometric vibrometer is developed to directly capture SMW on IGBT bare dies. Combining segmented sliding average filtering and empirical mode decomposition, an efficient extraction algorithm is proposed to realize accurate acquisition of weak SMW signal. Based on this method, the dependency relationship between the SMW signal and turn-off switching parameters of IGBT chips is investigated with an inductive pulse testing circuit, indicating that the intensity of SMW presents significantly positive correlation with the turn-off power dissipation. Moreover, with the aid of electronical scanning platform, field distribution characteristics of SMW are also investigated. This work provides an effective method to realize direct capture of SMW on IGBT bare dies, paving the way to facilitate fundamental exploration of SMW effect in power electronic devices.

关键词： Germanium   Insulated gate bipolar transistors   Logic gates   Capacitance   Threshold voltage   Switches   Resistance   Delays   Gate drivers   Equivalent circuits   dV/dt   false turn-on   floating p-well   insulated gate bipolar transistor (IGBT)   micropattern trench (MPT)   miller capacitance   split gate (SG)  

摘要： In a half bridge circuit, one OFF-state insulated gate bipolar transistor (IGBT) can be turned on falsely if its overshoot of gate voltage (V-GE) exceeds the threshold voltage (Vth) during the turn-on period of the another IGBT. In this article, the mechanism of false turn-on in the IGBT with floating p-well i.e., injection-enhanced IGBT (IEGT) is studied based on theoretical analysis, simulation, and experiment. Main factors determining the overshoot of V(GE)are Miller capacitance (C-GC), collector voltage change rate (dV(CE)/dt), gate-emitter capacitance (C-GE), and gate resistance (R-G). It is found that the peak overshoot of V-GE V-GE(max) occurs after the time with peak dV(CE)/dt due to the RG CGE network, which is beneficial for reducing V-GE(max) to some extent. Reducing C-GC is the most effective way to suppress the false turn-on and improve the tradeoff between turn-on loss (Eon) and V-GE(max), which is verified by comparing the IEGT with three improved structures, i.e., IGBT with floating p-well separated from the trench gate, micropattern trench (MPT) IGBT, and split gate (SG) IGBT. Experimental results show that V-GE(max) in MPT IGBT is reduced by 39% even under a higher peak dV(CE)/dt.

关键词： junction temperature   IGBT   NTC   Foster thermal model  

摘要： This study proposes a method for estimating the junction temperature of power semiconductors, particularly IGBTs (Insulated Gate Bipolar Transistors) and diodes. Traditional temperature measurement methods using NTC (Negative Temperature Coefficient) sensors have limitations in reflecting dynamic conditions in real time, as temperature changes take time to reach the sensors. To address this, this study proposes a junction temperature estimation method using RC curve fitting and a thermal impedance model. This model represents the thermal behavior of IGBTs and diodes using a Foster thermal network that considers the resistance and capacitance of the heat transfer path. In particular, transient temperature estimation considering thermal coupling enables the prediction of temperature changes in IGBTs and diodes. To verify the proposed temperature estimation method, experiments were conducted to build the model based on data measured with an infrared thermal camera and NTC sensors. The model's estimated results were compared with actual values across 25 operating regions, achieving a maximum MAE (Mean Absolute Error) of 2.26 degrees C. A comparative analysis of first-, second-, third-, and fourth-order Foster networks revealed that, while higher orders improve accuracy, gains beyond the second order are minimal relative to computational demands. This study contributes to enhancing not only the reliability of power semiconductor modules but also minimizing the temperature margin for inverters by estimating the junction temperature with better dynamic performance than that achieved by NTC sensors.

关键词： IGBT modules   Electromagnetic force   Frequency-doubled vibration   Laser vibrometer  

摘要： As a kind of widely employed power semiconductor devices, insulated gate bipolar transistor (IGBT) modules are often confronted with strong load current from tens to hundreds of amperes. Thus, the electrical-magneticmechanical coupling characteristics in IGBT modules deserve priority attention for reliability evaluation. Herein, an in-depth investigation of electromagnetic force effect in IGBT modules is implemented from both theoretical and experimental approaches. Utilizing uniquely designed excitation strategy of single frequency sinusoidal alternating load current superimposed by direct current bias, the exclusive frequency-doubled vibration signal induced by electromagnetic force effect is successfully observed on the IGBT bare die with the aid of laser interferometric vibrometer, providing direct and confident evidence for the existence of electromagnetic force effect in IGBT modules. This work is bound to bring new insights to fundamental exploration of electricalmechanical coupling induced reliability issues in power electronic devices.

关键词： cascaded H-bridge rectifier   open-circuit fault   IGBT   universality   real-time fault diagnosis  

摘要： To effectively diagnose open-circuit (OC) faults in the insulated gate bipolar transistor (IGBT) of a cascaded H-bridge rectifier (CHBR) in real-time, this paper uses a single-phase three-cell CHBR as an example. Through mechanism analysis, the variation patterns of the capacitor voltage and grid current due to OC faults are defined. Based on this, the DC capacitor voltage threshold (VT) and the grid current coefficient of variation (CCV) are introduced as fault diagnosis indices, and a real-time OC fault diagnosis method for CHBR is established. The robustness, accuracy, timeliness, and universality of the proposed method are validated through simulations. The results show that the proposed method exhibits strong robustness when the grid voltage fluctuates, either dropping from 3 kV to 2.85 kV or rising from 3 kV to 3.15 kV. Compared to existing diagnostic methods, the proposed approach requires less diagnostic time, with the faulty IGBT being identified in as little as 3.09 ms under optimal conditions. Additionally, the diagnostic performance remains unaffected by changes in control strategies, making it universally applicable for OC fault diagnosis in CHBR under various control strategies (such as dq current decoupling control, PR current control, and transient current control), with comparable diagnosis results and speeds.

关键词： Insulated gate bipolar transistors   Structural engineering   Performance evaluation   Predictive models   Optimization   Training   Prediction algorithms   Artificial neural networks (ANNs)   automatic optimization   electrical performance   insulated gate bipolar transistor (IGBT)   optimization algorithm  

摘要： Insulated gate bipolar transistors (IGBTs) are the key component in power electronics, and the intricate relationship between their performance and structural parameters poses a formidable challenge in the design process. This article proposes an automatic optimal design method for IGBT structural parameters to leverage the pretrained machine learning (ML) model to efficiently predict the initial IGBT device's performance, followed by utilizing the differential evolution (DE) algorithm to automatically adjust structural parameters based on the disparity between predicted and expected device performance until the expected performance is achieved. The method is validated in the design of punch-through IGBTs (PT-IGBTs) and trench gate field-stop IGBTs (FS-IGBTs), and the performance of technology computer-aided design (TCAD) simulation of the designed device is similar to the target performance. In particular, the simulation results of the designed FS-IGBT are highly fitted to the datasheet of the commercial device, which verifies the generalizability and effectiveness of the method. In addition, comparative analyses with various algorithms show DE provides the fastest optimization and extraordinary robustness under the exact specifications. Crucially, the proposed design scheme aligns with semiconductor physics. The method simplifies IGBT design without the need for manual tuning and TCAD tool simulation.

关键词： IGBT module aging   junction temperature   power quality   multi-objective optimization   thermal management strategy   switching frequency   gate drive resistance  

摘要： Converters play a critical role in wind power generation systems, with their reliability directly impacting system stability and operational efficiency. To address the challenges posed by increased thermal load fluctuations due to solder layer aging in insulated gate bipolar transistor (IGBT) modules in converters, this paper proposes an aging-aware multi-objective thermal management (AAMO-TM) strategy to enhance the performance of aging modules. An improved junction temperature estimation model is developed, incorporating coordinated control of switching frequency and gate drive resistance to account for the dynamic thermal behavior of IGBT modules during aging. Pareto and hierarchical optimization techniques are employed to resolve the multi-objective problem of excessive junction temperature suppression, junction temperature fluctuation smoothing, and power quality improvement. Experimental results demonstrate that our proposed AAMO-TM strategy outperforms a competing strategy at temperature fluctuation by a large margin (up to 59.4%). Our proposed strategy significantly enhances the thermal stability of aging IGBT modules while effectively suppressing grid-connected current harmonics. This study provides valuable theoretical insights and practical guidance for achieving the stable operation of wind turbines and delivering high-quality power output.

关键词： Insulated gate bipolar transistors   Temperature sensors   Temperature measurement   Finite element analysis   Copper   Wire   Aging   Temperature   Current measurement   Analytical models   Characteristics parameters   finite element model (FEM)   health status assessment   insulated gate bipolar transistor (IGBT)  

摘要： The Insulated Gate Bipolar Transistor (IGBT) is a critical component of power electronic equipment, and the health of the IGBT device is of utmost importance to ensure the reliability and stability of the power system. This paper proposes a method for assessing the health status of IGBT device based on characteristics identification. Firstly, a finite element model of the IGBT device is established to analyze the performance of bond-wire and solder layer under the power cycling condition. Secondly, the IGBT device under solder layer failure and bond-wire failure are simulated, and the characteristics parameters of the IGBT device under different aging degree are analyzed. Finally, an adaptive network-based fuzzy inference system (ANFIS) algorithm is used to establish the IGBT device health status assessment model, and power cycling test data is used to verify the accuracy of the health state evaluation model, which reaches more than 94.8%. The results show that the proposed method can effectively evaluate the health status of IGBT device.

关键词： Grid-following inverter (GFL)   Grid-forming inverter (GFM)   Insulated gate bipolar transistor (IGBT)   Virtual Synchronous Generator (VSG)   IGBT Lifetime  

摘要： This study examines the thermal effects on Insulated Gate Bipolar Transistors (IGBTs) in Grid-Following (GFL) and Grid-Forming (GFM) inverters under Virtual Synchronous Generator (VSG) inertia control. Using a real-time simulation on a Typhoon Hardware-in-the-Loop (HIL) platform, the research evaluates how varying inertia constants (H = 1, 4, 8 ss) influence IGBT lifespan. Results demonstrate a trade-off between frequency stability and IGBT durability. Higher inertia constants improve grid frequency stability but impose greater thermal stress and power losses, significantly reducing IGBT lifespan. For H = 1, the IGBT lifespan is 174.93 years for GFL inverters and 95.89 years for GFM inverters. At H = 4, the lifespans decrease to 37.05 years and 9.32 years, respectively. For H = 8, lifespans further drop to 9.49 years for GFL and 1.57 years for GFM. These findings highlight the critical balance between maintaining grid stability and ensuring component longevity, offering valuable guidance for optimizing inertia settings in power systems.

关键词： 电力机车   IGBT   多热源   相变冷却   热力模型  

摘要： 为解决电力机车核心器件IGBT（绝缘栅双极型晶体管）多热源、高功率的散热需求，提出一种多热源自然循环相变冷却系统，系统为每个IGBT配置了10条冷却通道。采用Python编程，离散蒸发器和冷凝器通道及连接管道，并结合阻力损失模型与两相流传热模型建立可计算系统性能及使用要求的热力模型。按1:1搭建系统实验台，采用自制热源模拟IGBT发热过程，开展2组不同功率下的冷却实验，对系统冷却性能进行验证。通过对比蒸发器出口工质温度以及热源温度的测量值与计算值，对热力模型进行验证。基于热力模型，计算并分析系统在设计工况下的流动、传热特征，探讨系统在不同循环流量、热源功率下的性能。研究结果表明，所设计的系统在每个热源发热功率为200W的条件下，热源温度≤51℃，可以满足≤65℃的要求。对比实验值，本文建立的模型对工质温度预测的误差≤0.06℃，对热源温度预测的误差≤2.64℃，说明模型可以较为准确地预测系统性能。冷却通道内，过冷工质相变较受热存在一段延迟，在该段内换热系数较低，热源可能会在该位置出现局部高温。随循环流量增大，热源温度先迅速降低，随后缓慢升高，存在一个使热源温度最低的理想循环流量（0.80 NL/min）。系统在每个热源功率在250-500W下可以稳定工作，具有最佳的性价比。研究结果为电力机车IGBT冷却系统设计及优化提供参考。