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关键词： 煤矿井下   机电设备   节能对策  

摘要： 在煤矿井下开采的过程中,机电设备属于不可或缺的开采设备之一。然而,井下机电设备在开采过程中产生的能耗比较高,这与煤矿企业的绿色开采理念不相符。因此,为了实现煤矿井下开采机电设备节能降耗的目标,煤矿企业需要高度关注煤矿井下机电设备的相关能耗问题,并采取有效的节能措施,尽可能降低能耗,这对于煤矿企业的经济效益最大化以及长期稳定的发展有着关键作用。文章通过阐述皮带运输机采用变频调速的优点,再结合变频器工作原理的论述,简要分析了变频器在煤矿井下皮带机中的应用及节能研究的相关案例,以供参考。

关键词： Insulate gate bipolar transistor (IGBT)   Proton irradiation   Total ionizing dose effects   Safe operating area  

摘要： Insulated gate bipolar transistor (IGBT) is a bipolar gate -controlled device with high blocking voltage, current density, and switching frequency. The inverters composed of IGBTs can be used in the power system of spacecraft for power control and distribution. However, in the space environment, cosmic rays such as protons and gamma-ray, may cause the total ionizing dose (TID) effects on IGBT, reducing its performance and even leading to degradation of the safe operating area (SOA). Many researches have focused on the impact of gamma-ray. However, there are few studies on TID effects induced by proton irradiation. Also, previous studies mainly focused on the degradation of IGBT electrical characteristics caused by the TID effects. To the best knowledge of authors, there is no report on the impact of TID effects on the SOA of IGBT. In this article, in order to investigate the degradation of IGBT induced by proton irradiation, we conducted the proton irradiation experiment on commercially available 1200 V/40 A trench field -stop IGBT (TFS-IGBT) with different irradiation fluence. By using TCAD simulations, a 2D TFS-IGBT model has been set up to simulate and analyze the impact on switching characteristics and SOA. Both experimental and simulation results indicate that the proton irradiation leads to the degradation of the electrical characteristics of the IGBT, such as the negative shift of the threshold voltage, the increase of collector -emitter leakage current, and the decrease of collectoremitter breakdown voltage. Meanwhile, the short-circuit characteristics of IGBT have severely degraded, while the reverse bias safe operating area (RBSOA) has not significantly changed.

关键词： Insulated gate bipolar transistors   Plastics   Strain   Predictive models   Analytical models   Deformation   Deformable models   Base solder layer   insulated gate bipolar transistor (IGBT)   lifetime prediction   plastic strain energy density  

摘要： Insulated gate bipolar transistor (IGBT) is the most important power electronic component in the traction converters of trains. During the operation of the IGBT, the solder layer is continuously subjected to alternating stress, which eventually leads to the fatigue failure of the solder layer. Therefore, an accurate assessment of the lifetime of the IGBT module solder layer is of great importance for the safe and reliable operation of the trains. First, the micromechanism of the plastic deformation of the base solder layer of the IGBT module is introduced, as well as the lifetime model based on the plastic strain energy density. Then, the total plastic strain energy density of the base solder layer is determined by conducting the accelerated aging tests on the IGBT module and combining the finite element simulation results. Meanwhile, the relationship between different aging degrees of the base solder layer of the IGBT module and the plastic strain energy density is studied by finite element simulation. Then, the lifetime of the base solder layer at different aging stages is calculated based on the above results, so that the total lifetime of the IGBT module is obtained. Finally, the predicted lifetime of the IGBT module by the proposed method is compared with the lifetime obtained by the accelerated aging test and compared with the traditional lifetime prediction method based on the Coffin-Manson-Arrhenius model. The comparison results verify the accuracy of the proposed lifetime prediction method in this article.

关键词： 变频器  

ISBN: (纸本)9787122445865

摘要： 本书采用一图一文的形式, 在简要介绍变频器基础知识的同时, 主要选取11种常用的进口变频器, 针对性地讲解了每一种类型变频器的电路图及原理, 并相应地介绍了电路故障检修要点。本书特点: 1. 电路图如主电路、驱动电路、制动电路等, 均为作者本人测绘, 是十分有价值的资料。2. 采用一图一文的形式, 即一页电路图对应一页原理讲解, 清晰方便。3. 配有各个类型变频器的实物图, 电路图与实物图对照讲解, 更为直观。

关键词： Insulated gate bipolar transistors (IGBT)  

摘要： Back-gate-controlled IGBT (BC-IGBT) which uses a manufacturable double side lithography is experimentally demonstrated. The impact of IGBT scaling on BC-IGBT is evaluated in detail. A back gate control (BC-) mode in scaled IGBT shows better performance improvement compared with the BC-mode in non-scaled IGBT. Superior performance of BC-IGBT by optimizing both front side and back side design has been realized. Back gate control with scaled IGBT will provide a new technological option for expanding the frequency/voltage range of Si power devices, and become an attractive candidate for next generation high performance IGBTs. © 2024 The Institute of Electrical Engineers of Japan.

关键词： Insulated gate bipolar transistors (IGBT)  

摘要： Surge voltage at IGBT turn-off switching was analyzed with dependence on cell design parameters. Although drift layer thinning is effective to improve trade-off characteristics between turn-off loss Eoff and on-state voltage Von, voltage surge is induced due to quick expanding depletion layer. Therefore, the surge voltage Vsurge has also trade-off relationship with the Von at the same Eoff condition. The origin of voltage surge was analyzed using TCAD simulation, and total amount of remained hole in the drift layer during turn-off switching is a key factor for the Vsurge. Narrow mesa structure and thick buffer layer are effective for improvement of trade-off characteristics between Vsurge and Von © 2024 The Institute of Electrical Engineers of Japan.

关键词： Insulated-gate bipolar transistor (IGBT)   integrated gate-commutated thyristor (IGCT)   mixture-devices-based submodule (MS)   modular multilevel converter (MMC)   power loss  

摘要： At present, insulated-gate bipolar transistor (IGBT) is widely used as the converter component in the submodule of modular multilevel converter (MMC) for its excellent performance in driving circuit and switching speed, but the further application is restricted by its high conduction loss and cost rate. Integrated gate-commutated thyristor (IGCT) is another converter device used in MMC with low conduction loss and cost. However, the di/dt capability of IGCT is limited so that a snubber circuit is required in the submodule for protection, which generates unwanted power loss for MMC. For better performance and reliability, this article proposes a mixture-devices-based submodule for MMC based on the cooperation of parallel IGCT and IGBT devices. Double-pulse switching experiments for the MS are conducted to verify its effectiveness, and to get the data for the follow-up switching power loss calculation. The power loss of MMC based on IGBT, IGCT and mixture devices are calculated based on the model established in this article. Furthermore, the comprehensive comparison for power loss among IGBT-based, IGCT-based and mixture-device-based MMCs are performed, proving the effectiveness of the mixture topology in terms of power loss reduction. Meanwhile, the proposed MS is cost-competitive.

关键词： IGBT   bonded interface mechanical property   traction-separation relations   cohesive zone model   machine learning  

摘要： For insulated gate bipolar transistor (IGBT) modules using wire bonding as the interconnection method, the main failure mechanism is cracking of the bonded interface. Studying the mechanical properties of the bonded interface is crucial for assessing the reliability of IGBT modules. In this paper, first, shear tests are conducted on the bonded interface to test the bonded interface's strength. Then, finite element-cohesive zone modeling (FE-CZM) is established to describe the mechanical behavior of the bonded interface. A novel machine learning (ML) architecture integrating a convolutional neural network (CNN) and a long short-term memory (LSTM) network is used to identify the shape and parameters of the traction separation law (TSL) of the FE-CZM model accurately and efficiently. The CNN-LSTM architecture not only has excellent feature extraction and sequence-data-processing abilities but can also effectively address the long-term dependency problem. A total of 1800 sets of datasets are obtained based on numerical computations, and the CNN-LSTM architecture is trained with load-displacement (F-delta) curves as input parameters and TSL shapes and parameters as output parameters. The results show that the error rate of the model for TSL shape prediction is only 0.186%. The performance metric's mean absolute percentage error (MAPE) is less than 3.5044% for all the predictions of the TSL parameters. Compared with separate CNN and LSTM architectures, the proposed CNN-LSTM-architecture approach exhibits obvious advantages in recognizing TSL shapes and parameters. A combination of the FE-CZM and ML methods in this paper provides a promising and effective solution for identifying the mechanical parameters of the bonded interfaces of IGBT modules.

关键词： Fast temperature prediction   POD-Galerkin method   Insulated Gate Bipolar Transistor (IGBT)   Heat conduction  

摘要： With the continuous improvement of power density and integration level of power devices, the temperature prediction of power devices becomes increasingly crucial for reliable operation and thermal management. Existing thermal analysis methods cannot meet the needs of fast and accurate calculation of detailed temperature fields. A novel three-dimensional fast prediction model of full temperature field for the Insulated Gate Bipolar Transistor (IGBT) module is established based on the improved POD-Galerkin method. The reliability and performance of the proposed model are assessed via the comparison with the finite volume method (FVM) on four types of problems, including two steady-state problems with the first and third boundary conditions, respectively, and two unsteady-state problems with a fixed and variable power loss of chips, respectively. The perfect agreement between the results of the two methods confirms the accuracy of the proposed model, and the comparison of the calculation time shows its ability to greatly reduce the computation effort. The proposed model can obtain the detailed information on the whole temperature field of the IGBT module accurately in a much shorter time, which is significant for temperature and thermal stress monitoring and the development of its digital twinning technology.

关键词： Domestic appliances  

摘要： Insulated gate bipolar transistors (IGBTs) are now widely used in a variety of products ranging from home appliances to power conversion equipment. This paper introduces multi-gate control techniques for IGBTs with the aim of further reducing their total power loss. Results of experiments using prototype devices confirmed that multi-gate control achieves reductions in turn-off loss (Eoff), turn-on loss (Eon) and reverse recovery loss (Err) by 27%, 50% and 32%, respectively, compared with the conventional single-gate controlled devices. © 2024 The Institute of Electrical Engineers of Japan.