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关键词： Hybrid switch   Active drive circuit   Current overshoot   SiC MOSFET   IGBT  

摘要： Hybrid Switch (HyS) is consisted of a high-current Si-insulated gate bipolar transistor (IGBT) and a low-current Silicon Carbide (SiC)-MOSFET connected in parallel, which has been widely studied due to their high efficiency and low cost. In general, to realize the zero-voltage conduction of IGBTs, the switching timing of the Hys is usually chosen to turn on the SiC earlier or at the same instant. However, HyS will have current overcurrent stress problem in practical applications, resulting in the maximum current rating being limited. In this paper, an active drive circuit is proposed to suppress the SiC MOSFET current overshoot by extracting part of the driving current during the SiC current rise phase, so as to ensure the operational reliability of the hybrid switches. A double-pulse test platform was built to verify the proposed driver circuit under different load current conditions. The experimental results show that compared with the conventional gate driver (CGD) circuit, the Si/SiC hybrid switches with the active gate driver(AGD) circuit proposed in this paper suppresses the current overshoot of the SiC by 38.3 %, 28.4 %, and 22 % in the heavy-load, medium-load, and light-load conditions, respectively, when the drain resistance is selected to be 3 Omega. The peak current of the SiC is within the limit of the safe operating area, while the increased switching loss is within the acceptable range.

关键词： Insulated gate bipolar transistors (IGBT)  

摘要： This study deals with the development of a wide-frequency-band characterization for failure analysis of power modules, focusing on a specific IGBT packaging. It is highlighted that different characteristics of the IGBT and the packaging can be distinguished depending on the frequency band analyzed, enabling the detection of potential failure modes. Particularly, for the power bond-wire lift-off mechanism, the paper emphasizes the importance of considering high-frequency analysis above 200 MHz. It is enabled through the definition of a failure indicator, demonstrating the ability to highlight partial failures as well as to localize them. © 2025 Elsevier Ltd

关键词： Current gain   FEM simulation   Gummel number   IGBT   Power device   TCAD simulation  

摘要： Various types of collectors have been reported for insulated-gate bipolar transistors (IGBTs). Despite their importance however, a thorough study on the influence of the collector structure on the performance of the IGBT is lacking in literature. In this work, the impact of the collector structure on mainly the DC performance of the IGBT has been studied through extensive TCAD simulations. This is done via the Gummel number of the collector, which is used for three types of collector structures (i.e. silicon, silicon-germanium, and pure boron). These structures are interesting because they can extend the Gummel numbers to respectively smaller and higher values, and potentially also reduce the process complexity. Finally, an analytical expression between the saturation voltage and stored charge, i.e. the trade-off curve, has been derived, where the stored charge is a good measure for the switching losses. Therefore, this analytical expression can be employed to estimate the switching losses directly from device properties.

关键词： FS-IGBT   SC2   Circuit parameters   Ruggedness   tsc  

摘要： Field-stop insulated gate bipolar transistors (FS-IGBTs) are extensively utilized in various power applications because of their lower conduction and switching losses. However, as application conditions become more demanding, there is an increasing need for improved reliability and ruggedness of the FS-IGBT. Short circuits are one of the most common failures of FS-IGBTs. Under these circumstances, the device may conduct unexpectedly or operate with minimal bus parasitic inductance, leading to a significant increase in the device's junction temperature. Failure to turn off the FS-IGBT promptly may result in thermal runaway and device burnout. Shortcircuit type 2 (SC2) is more frequently observed in practical FS-IGBT applications than short-circuit type 1 (SC1). Nevertheless, the majority of current research primarily concentrates on SC1, with relatively limited studies on SC2 of FS-IGBTs. This study aims to investigate the circuit parameters of SC2 and comprehensively analyze the impact of each parameter on SC2. The experimental results indicate that the bus voltage VDC, gate voltage VG, and temperature TC significantly affect the SC2 performance of the FS-IGBT. Therefore, a moderate decrease in VDC, VG, and TC can effectively enhance the ruggedness of SC2 and the short-circuit withstand time tSC of the device.

关键词： Insulated gate bipolar transistor (IGBT)   Failure mechanism   convolutional neural   network and long short-term memory (CNN-LSTM)   Degradation prediction  

摘要： The reliability of insulated gate bipolar transistor (IGBT) directly affects the safe and stable operation of power electronic system. Based on the IGBT accelerated aging open data set provided by NASA PCoE, the peak collectoremitter voltage during IGBT shutdown is selected as the failure characteristic parameter. Convolutional neural network and long short-term memory network (CNN-LSTM) model is used to predict IGBT failure precursor parameters and estimate the degradation behavior of IGBT modules in this paper. The sliding window method is employed to construct input and output data. When the window width is 3, the prediction model works best. By running the proposed model many times, the average values of MAPE, MAE, MSE and RMSE of the CNN-LSTM network proposed in this paper are 0.0038,0.0468,0.0059,0.0600, which have higher accuracy than other networks. At the same time, the four indicators of the CNN-LSTM model are the most stable and the prediction credibility is higher through the box plot analysis. This prediction method provides a new idea for IGBT degradation behavior prediction.

关键词： Temperature measurement   Insulated gate bipolar transistors   Monitoring   Temperature sensors   Threshold voltage   Logic gates   Junctions   Voltage measurement   Current measurement   Semiconductor device measurement   Junction temperature   press-pack insulated gate bipolar transistor (PP IGBT)   reliability   temperature monitoring   virtual threshold voltage  

摘要： Online junction temperature (T-j) monitoring of press-pack insulated gate bipolar transistor (PP IGBT) is of great significance for improving reliability in high voltage and high power applications. Due to the complexity of press-pack packaging, the conventional T-j monitoring method is difficult to online monitor T-j of PP IGBT. In this article, the virtual threshold voltage (V-v(,th)) is proposed as a novel temperature sensitive electrical parameter. A simple V-v(,th) monitoring circuit which does not affect the normal operation of converter is proposed. Within one switching cycle of PP IGBT, T-j is online monitored accurately. The feasibility of proposed online T-j monitoring method is verified based on a half-bridge inverter. A thermocouple is sealed into an emitter molybdenum to obtain IGBT chip temperature. A good linear relationship between V-v(,th) and T-j is analyzed. Pearson correlation coefficients of fitting results at 0.31 kN and 4.30 kN are -0.99871 and -0.99970, respectively. The accuracy of proposed method is validated by comparing the temperature measured by thermocouple with the temperature calculated based on V-v(,th). The error between the measured temperature and the calculated temperature is within 2.5 degrees C. The online experimental results demonstrate that the proposed method can accurately monitor T-j of PP IGBT.

关键词： Insulated gate bipolar transistor (IGBT)   Turn-on loss (Eon)   Turn-off loss (Eoff)   On-state voltage (Von)   Segmented anode   Superjunction  

摘要： To reduce switching losses and improve the breakdown voltage of IGBTs, a novel superjunction IGBT structure with a non-equivalent segmented anode NPN transistor (NSA-SJ-IGBT) is proposed, along with a simulation study of its performance. The proposed structure incorporates a collector region embedded with a non-equivalent segmented anode NPN transistor. By optimizing the concentration and thickness of the P-type region in the NPN transistor of the NSA-SJ-IGBT, electron extraction during the turn-off process is accelerated, resulting in a significant reduction in turn-off losses. Additionally, during the turn-on process, the NSA-SJ-IGBT benefits from a more direct flow path for both electrons and holes, as well as a more uniform distribution of electron and hole densities, which facilitates faster and more efficient turn-on. Compared to the NSA-BJSJ-IGBT structure, the NSASJ-IGBT exhibits a reduction of approximately 38.7 % in turn-on losses at the same forward conduction voltage, while maintaining similar breakdown voltage and turn-off losses. When compared to the BJSJ-IGBT, under equivalent conditions and comparable forward conduction voltage, the NSA-SJ-IGBT demonstrates a 41 % reduction in turn-off losses, a 32 % reduction in turn-on losses, and an improvement in breakdown voltage. Furthermore, the NSA-SJ-IGBT offers significant design flexibility, enabling better optimization of the trade-off between turn-off loss and conduction voltage drop by adjusting the embedded NPN transistor, thereby enhancing overall device performance.

关键词： Heterojunctions  

摘要： In this paper, a 4H-SiC semi-superjunction insulated gate bipolar transistor (IGBT) featuring a split-gate and back-side trench heterojunction (SGTH-IGBT) is proposed to minimize turn-off loss (Eoff) and suppress electromagnetic interference (EMI) noise. The SGTH-IGBT features a self-adaptive hole path (SHP) between the split-gate, enabling controlled hole storage during the on-state and rapid release during the turn-off transient. Additionally, the trench heterojunction establishes an electron extraction path to accelerate carrier removal. Compared to TFS-IGBT, the Eoff of the SGTH-IGBT is reduced by 62.5 % under the same on-state voltage (Von), while achieving a 29.7 % lower Von than the GS-IGBT at the same Eoff. Furthermore, the SGTH-IGBT reduces the Miller charge (Qgc) by 58.2 % compared to the TFS-IGBT. At the turn-on process, SGTH-IGBT can extract a portion of the holes accumulated at the trench gate bottom. This extraction reduces the reverse displacement current (IG_dis), thereby reducing EMI noise. In comparison to GS-IGBT and TFS-IGBT, the SGTH-IGBT demonstrates significantly better control of dV/dt through Rg. © 2025

关键词： bond wire and solder joint failure mechanisms   hybrid electrical vehicle   IGBT   mission profile   Monte Carlo method  

摘要： Electric vehicles (EVs) have caught significant attention in recent years due to their potential to reduce greenhouse gas emissions and dependency on fossil fuels. The reliability analysis of power electronic (PE) converters in EVs is crucial to improve their performance, cost-effectiveness, and long-term viability. In this paper, the lifetime estimation of IGBT in a hybrid EV unidirectional converter is evaluated based on control system impacts and statistical model uncertainties. For this purpose, a closed-loop model of a hybrid EV is developed in MATLAB using the Artemis mission profile to simulate the unidirectional converter output power. In the next step, the average model of the nonideal boost converter with Kharitonov’s controller is employed to calculate the IGBT losses. The robust controller is able to maintain converter model stability during long-term output power mission profile simulation. By applying the thermal impedance, the junction temperature profile of the switch is obtained, enabling lifetime analysis via rain flow (RF) and Miner’s rule methods. The results show that the controller selection considerably affects total consumed lifetime (TCL). Each controller can have a different TCL compared to other choices. Since the model coefficient for solder joint and bond wire failure mechanisms have been obtained based on the accelerated test results in the empirical method, considering the parameter statistical distribution and utilizing the Monte Carlo (MC) method can create a better view in the selection of IGBT and the converter design. Furthermore, based on the statistical results and the probability density function, it is feasible to determine how many percent of the IGBTs in the statistical community are damaged after a certain time. The B 10 parameter for the failure mechanisms of bond wire and solder is 11.2 and 450 years, respectively. This approach provides insights into risk assessment and design optimization.

关键词： insulated gate bipolar transistor (IGBT)   gate driver   monolithic integration  

摘要： This paper presents a smart monolithic integrated IGBT gate driver integrated circuit (IC) which is suitable for the control of 3-phase inverter and power factor correction (PFC). The chip integrates seven channels on a single chip, comprising three high-side and three low-side channels for the control of 3-phase inverter section, and one low-side PFC channel for the control of PFC section. By providing the undervoltage protection (UV), overcurrent protection (OC), and fault logic control, abnormal functionality caused by accidents is suppressed to prevent the power inverter system from failing or malfunctioning. The chip is designed and fabricated using a 600 V 1.0 pm high voltage Bipolar-CMOS-DMOS (BCD) process, in order to achieve high and low voltage circuits monolithic integration, and occupies a core area of only 3500 pm x 2400 pm. Experimental results validated the functionality of the chip. Compared to conventional solutions, this chip has more functions and higher integration, which deliver a complete power stage solution for high performance and cost-effective applications.