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关键词： 高压变频器   功率单元   故障诊断   检修方法  

摘要： 高压变频器功率单元是变频器的核心组成部分,负责电能的变换与传递,其工作性能直接决定了变频器的运行稳定性。然而,功率单元也是变频器中最容易出现故障的部分,因此,对其故障进行有效判断与及时检修显得尤为重要。本文详细探讨了高压变频器功率单元的常见故障类型、故障判断方法及检修流程,并提供典型故障实例分析和维保策略建议,旨在提升高压变频器的运行可靠性和经济性。

关键词： Wire   Insulated gate bipolar transistors   Mathematical models   Monitoring   Stress   Strain   Force   Copper   Transient analysis   Power electronics   Bonding wire lift-off   condition monitoring   electromagnetic voiceprint (EMVP)   influencing factor mechanism model   insulated gate bipolar transistor (IGBT)   solder aging  

摘要： State monitoring technology is essential for the fault prognostics and health management of power electronic devices. Electromagnetic voiceprint (EMVP) signals, produced during the switching transients of these devices, carry substantial information about their health status. In recent years, EMVP signals have gained attention as a promising state monitoring indicator for power electronic devices. However, the mechanism by which the health status of a device affects its EMVP signals remains unclear, limiting their use in health monitoring. This article investigates the impact of insulated gate bipolar transistor (IGBT) health status on EMVP signals and develops a mechanistic model to illustrate the influence of bond wire lift-off and solder aging on EMVP signals. Simulation models were developed to analyze the impact of both scenarios on EMVP signals. Typical features are proposed to characterize the relationship between IGBT health status and EMVP signal. Experimental validation supports the theoretical framework and simulation results. The research provides a theoretical foundation for the development of reliability evaluation methods based on EMVP.

关键词： Insulated gate bipolar transistors   Analytical models   Switches   Capacitance   Voltage   Logic gates   Transient analysis   P-i-n diodes   Accuracy   Load modeling   Field-stop (FS) insulated gate bipolar transistor (IGBT)   IGBT analytical modeling   switching transient   temperature-dependent model  

摘要： The field-stop (FS) insulated gate bipolar transistors (IGBTs) (FS IGBTs) become a mainstay in the IGBT market for medium and high-power applications nowadays. The wide application of FS IGBTs led to a great desire for fast and accurate simulation of the device. In this article, an analytical transient model is proposed for FS IGBT. Based on the improved understanding of the switching behavior of FS IGBT, complete analytical expressions of V-ce and I-c at switching transient are derived. The pivotal device characteristics depending on the junction temperature T-j1 of low-side IGBT and T-j2 of high-side IGBT are identified and modeled. To extract model parameters, experimental and datasheet-driven parameter extraction methods are proposed. Double-pulse tests are performed on 600 V and 1200 V-rated FS IGBTs under various test conditions. The simulated and experimental results are compared and good agreement is obtained.

关键词： Insulated gate bipolar transistors (IGBT)  

摘要： Insulated gate bipolar transistor (IGBT) power module is a key component of actuator devices in many systems which include electric vehicles (EVs). However, as the deployment of IGBT modules penetrates several mission-critical systems operating in harsher ambient, process voids in the solder joints challenge their reliability and fatigue life. This investigation quantifies the impact of presence of 10% voids in critical solder joints on the integrity and fatigue-life of IGBT module for reliable field operation. Computational modelling utilising python programming algorithm deployed in Monte-Carlo technique is used to generate realist distributions of spatial random voids on three representative volume elements (RVEs) of critical solder joints in three IGBT modules. The three modules have elliptical voids, spherical voids and a combination of elliptical and spherical voids, respectively. A fourth control module has no void. Solder joints in the models comprises 96.5% tin, 3.0% silver, and 0.5% copper (SAC305). The IEC 60068-2-14 temperature load cycle and Anand's visco-plastic model are employed as the load and constitutive model, respectively. Other component materials are modelled with appropriate time and temperature dependent models and material properties. Combined elliptical and spherical voids induced the highest damage while elliptical voids induced the highest plastic strain of 0.045 µm/µm magnitude in the joints. Accumulated stress and strain energy have magnitudes of 74.05 MPa and 2.63 × 105 pJ, respectively. Ten percent elliptical voids in the joints reduced the fatigue life of the module by 59.5%. © 2025 The Author(s)

关键词： Insulated gate bipolar transistors   Temperature measurement   Heating systems   Sensors   Monitoring   Logic gates   Semiconductor device measurement   Optical fibers   Packaging   Junction temperature   maximum temperature   online monitoring   press-pack IGBT   temperature sensors   temperature sensors  

摘要： Press-pack insulated gate bipolar transistor (PP IGBT) junction temperature online monitoring is of vital importance for the health management of high-voltage power conversion systems. The tradition methods destroy the packaging component and are difficult to obtain the maximum temperature of PP IGBT. A temperature sensor integrated method for directly obtaining the maximum temperature of PP IGBT chip is proposed in this article. Due to the uneven temperature distribution on the surface of the chip, the maximum temperature measurement depends on the mounting positions of temperature sensors. Three mounting positions of temperature sensors including the gap between gate pad and emitter molybdenum (Mo), the emitter Mo, and the gate pogo pin are reasonably proposed by theory analysis. The finite element simulations and constant current source tests show that as the clamping force increases, the maximum temperature point drifts from the center of the emitter surface to the gap. The maximum temperature of PP IGBT chip is increased after the emitter Mo is grooved. The mounting position located at the head of gate pogo pin avoids the influence of stress on the temperature sensor. The feasibility of the proposed method is verified based on a half-bridge inverter.

关键词： Normal distribution  

摘要： Due to the difference in the manufacturing process of IGBT devices, the lifetime of the IGBT modules is often distributed, whereas the traditional lifetime model based on the analytical method can hardly deal with the problem effectively. In this paper, a prediction method based on the parameter-distributed degradation model is proposed to probabilistically predict the lifetime interval of IGBT modules. First, the reasons for the distribution of IGBT lifetime are analyzed based on the package detects, operating characteristics, and degradation process. Then, the degradation model of IGBT state parameter is established based on the failure evolution law of conduction voltage drop. In the meantime, the distribution characteristics of the model parameters are obtained by the Levenberg-Marquardt algorithm. Finally, the lifetime probability distribution of IGBT modules is predicted by the Monte Carlo method and then verified by experimental examples and additionally compared with traditional models. Results show that the error of predicted average lifetime is around 3% under the consideration of the difference of the same type of IGBT modules. Compared with the traditional lifetime model, the proposed method is superior in predicting the distribution of IGBT lifetime. ©2025 *** ***.

关键词： IGBT   CEEMDAN   ADP   state monitoring identification   stress wave  

摘要： Insulated Gate Bipolar Transistors (IGBTs) are core components in electric energy conversion systems, and monitoring their health is essential for ensuring reliable operation. Turn-off stress wave signals emitted by IGBTs can be detected using acoustic emission (AE) sensors, offering a non-invasive means to assess device condition. In this study, we present a comprehensive framework that integrates complete ensemble empirical mode decomposition with adaptive noise (CEEMDAN), asymmetric dot pattern (ADP) conversion, and a residual network (ResNet) for accurate health-state ***, stress wave signals are decomposed into intrinsic mode functions (IMFs) via CEEMDAN. Next, IMFs with the highest energy contributions and the most distinct correlation differences are selected to emphasize fault-relevant features. Selected IMFs are then transformed into two-dimensional ADP images that capture signal dynamics and subtle variations across different health states. Finally, a ResNet classifier is trained on these images to categorize multiple IGBT health *** results on benchmark datasets demonstrate that our method achieves over 98 % classification accuracy-significantly outperforming traditional feature-based and shallow learning approaches. Moreover, it exhibits strong noise robustness and computational efficiency, making it suitable for real-time monitoring. This work offers a new non-destructive detection scheme for IGBT health assessment with promising industrial applications.

关键词： Logic gates   Voltage   Modulation   Switches   Tuning   High-voltage techniques   Magnetic circuits   Magnetosphere   Radio frequency   Oscillators   Magnetron   pulsed-power modulator   rate of rise of voltage pulse (RRV)   radio frequency (RF) power generation   RRV tuning  

摘要： The rate of rise of voltage pulse (RRV), determined by the rising slope of the pulse voltage, is a critical driving condition for stable radio frequency (RF) power output in a magnetron. This study introduces a technique for tuning the required RRV. The proposed method offers the advantage of implementation without the need for additional external components or high-voltage insulation designs exceeding several tens of kilovolts. RRV tuning is achieved by controlling the gate signal of the discharging switch in the pulsed-power modulator. A miniaturized pulsed-power modulator, with the same structural design as the high-voltage pulsed-power modulator of several tens of kilovolts, is fabricated. Various gate signal conditions are applied, and RRV characteristics are verified through pulse discharge experiments. The technique is then extended to the high-voltage pulsed-power modulator, and the output waveform corresponding to the RRV characteristics is analyzed in a linkage test with a 2.8-MW class S-band magnetron. The proposed RRV tuning technique is successfully validated, offering a practical solution for enhancing the performance and stability of magnetron-driven systems.

关键词： IGBT   Degradation state prediction   Improved sparrow search algorithm   Variational mode decomposition   Fluctuation-based dispersion entropy  

摘要： The insulated gate bipolar transistor (IGBT) is critical in motor drivers. Prolonged operation can lead to gradual degradation, adversely affecting motor operation and system performance. Therefore, accurate IGBT degradation state prediction (DSP) is essential for the timely maintenance and stable operation of motor drivers. The existing methods make it difficult to effectively deal with complex original degradation data, resulting in low DSP accuracy. To solve this issue, an improved method called ISSA-VMD-FDE based on optimized variational mode decomposition (VMD) and hybrid models is presented. Initially, the improved sparrow search algorithm (ISSA) is employed to optimize the VMD with minimum envelope entropy to obtain the key parameter combinations affecting VMD performance. Subsequently, the optimized VMD decomposes the IGBT degradation state data into multiple intrinsic mode functions (IMFs) and calculates each IMF's fluctuation-based dispersion entropy (FDE). Based on the magnitude of FDE, the IMFs are categorized into high-frequency and low-frequency components. Finally, different models are applied to predict the high-frequency and low-frequency components separately, and the predictions are combined to yield the final DSP results. Experimental results demonstrate that the proposed prediction method exhibits strong predictive performance and reduces the MAPE by 89.41% compared to conventional methods, effectively supporting predictive maintenance and ensuring the reliable operation of IGBT.

关键词： 风力发电系统   故障   变频器   诊断与维护  

摘要： 随着风电系统的快速发展,目前已逐步成为国内新能源的主要发展方向之一,其稳定、可靠的运行关系到我国的能源结构转变。文章在对风力发电进行简单的概述之后,重点讨论了风力发电装置的选型和变频调速装置的意义。基于风力发电系统中的变频调速装置下文进行了详细的介绍,并对其在风机调速装置中的应用作了详细的论述。在此基础上,通过构建预防性维护模型,结合大数据技术,对维修周期进行更加理性的规划,最终制定出一套科学的维修方案,为提高风电传感器检测的准确性和预防性维护效率,降低维护费用,提高设备的运行效率和经济性。