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关键词： Insulated gate bipolar transistors   Degradation   Thermal degradation   Mathematical models   Junctions   Finite element analysis   Heating systems   Solid modeling   Packaging   Manufacturing   Chip solder degradation   compact thermal network model   finite-element method (FEM)   insulated gate bipolar transistor (IGBT)   long time scale  

摘要： The cause of failures in insulated gate bipolar transistor (IGBT) modules is primarily attributed to temperature-related factors. Accurately estimating the junction temperature of IGBT modules is crucial for enhancing their reliability. Currently, thermal network models stand as commonly used tools for estimating the junction temperature of IGBT modules. However, prevailing thermal models exhibit certain limitations in accurately predicting the junction temperature, particularly when considering the degradation of chip solder within IGBT modules. This article presents a practical degradation model of the chip solder layer, establishing a functional correlation between the chip solder degradation rate and the number of power cycles. A dynamic compact thermal network model over long time scales is established, and the method for thermal parameter extraction is discussed. The finite-element simulation and experimental results show that the dynamic compact thermal network model can accurately estimate the junction temperature.

关键词： Oscillators   Insulated gate bipolar transistors   Time-domain analysis   Voltage   Charge carrier processes   Semiconductor device measurement   Resistance   Analytical formula   nonpunch through (NPT) insulated gate bipolar transistor (IGBT) chips   plasma extraction transit time (PETT) oscillation   time-domain characteristic parameters   wide voltage range  

摘要： Plasma extraction transit time (PETT) oscillation belongs to the negative resistance oscillation, whose features vary greatly with operation conditions. Besides, these oscillation features determine PETT's electromagnetic interference emission level. Therefore, establishing an oscillation model is complex but necessary, especially for the time-domain model over a wide voltage range. This article presents an analytical formula for the PETT oscillation of the nonpunch through (NPT) planar insulated gate bipolar transistor (IGBT) chips. The formula in this article first proves that, in the NPT planar IGBT chips, there is an exponential relationship between the load current and the hole carrier concentration at the oscillation start moment. Then, the dc-link voltage, load current, and time are decoupled in the expression of the PETT oscillation. Moreover, for NPT planar IGBT chips, this analytical formula is well-matched with the experiment results from 700 to 2000 V at different load currents and temperatures, further verifying the proposed formula's accuracy.

关键词： Insulated gate bipolar transistors   Temperature measurement   Monitoring   Temperature sensors   Heating systems   Degradation   Mathematical models   Condition monitoring   multichip insulated gate bipolar transistor (IGBT) module   radiator temperature   thermal attenuation coefficient  

摘要： The multichip insulated gate bipolar transistor (IGBT) module has been widely used in the converter with high-power capacity. However, multichip IGBT module usually suffers from inhomogeneous thermal fatigue, which undermines the reliability of the whole assemble. This article proposed to use the multipoint temperature of radiator to monitor the health status of parallel chips in the IGBT module simultaneously. We show that the thermal attenuation coefficient of radiator temperature increases during the aging of device. Furthermore, this method enables quantifying the uneven degree of solder layer degradation, which is beneficial for the analysis of current distribution and thermal imbalance. Simulations in COMSOL and experimental tests on a pulsewidth modulation bridge were performed to verify the proposed approach. The influence of operating current, operating mode, cooling condition, sensor position and chip layout were also analyzed.

关键词： Compensation   dead time   distortion   distortion   half bridge model   half bridge model   IGBT   IGBT   interlock time   interlock time   nonlinearity   nonlinearity   nonlinearity  

摘要： Voltage and/or current of multiphase systems are usually controlled using frequency converters (FCs). Typically, these FCs consist of several half bridges and, due to their working principle, their output voltage will depend on the output current nonlinearly. Many well known compensation methods (CMs) rely on the assumption that the current is nearly constant during one switching cycle. However, with decreasing load inductances this assumption may not be fulfilled and therefore these methods may not succeed in achieving full compensation. This contribution provides a CM, which takes the so-called ripple current into account and is therefore especially useful when dealing with small load inductances.

关键词： traditional coolant   thermal performance   nano-fluids   thermal conductivity   consideration  

摘要： The thermal performance of Liquid-cooled plate (LCP) can be improved by using different kinds of materials and coolants. Suitable and effective coolant can bring better cooling capacity to cope with the impact of high temperature on IGBT chips, and improve the safety and service life of new energy metallurgical loaders. In this context, the recent progress of the effects of traditional coolants, nano-fluids, ethylene glycol and oil on the heat transfer capacity of the liquid cooling plate is reviewed in detail. Nanofluids have been identified as the most prominent cooling method at present because of their good thermal conductivity. In addition, the considerations and advantages and disadvantages of using different coolants are discussed in depth.

关键词： plc技术  

ISBN: (纸本)9787122455666

摘要： 本书以彩色图解的方式系统讲解了以PLC为核心的控制系统相关技术及应用，详细介绍了PLC电气控制常用部件、变频器与变频控制技术、机器人控制线路与伺服电机、触摸屏操作与编程以及组态软件等关键技术知识，并深入剖析了西门子PLC和三菱PLC在各类控制中综合应用的典型案例。

关键词： Insulated gate bipolar transistors (IGBT)  

摘要： This paper investigates the impact of bond wire aging on differential mode (DM) electromagnetic interference (EMI) noise emissions in IGBTs under the influence of high-frequency ringing. Using a DC-DC buck converter composed of an IGBT half-bridge module as an example, the study analyzes the changes in the EMI spectrum caused by bond wire lift-off in both the time and frequency domains. The paper explains the generation mechanism of high-frequency oscillations induced by the interaction between the stray inductance of the DC link and the freewheeling diode. The study reveals that bond wire lift-off alters DM EMI noise emissions by affecting the switching characteristics of the IGBT. Additionally, an increase in the number of lift-off bond wires during ringing significantly enhances DM EMI noise emissions at and above the resonance frequency. The findings of this study provide a new perspective on the aging effects of power electronic devices and their impact on EMI. © 2001-2011 IEEE.

关键词： Inverters   Logic gates   High-voltage techniques   Wireless communication   Resonant frequency   Insulation   Coils   Wireless power transfer   Insulated gate bipolar transistors   Wireless sensor networks   IGBT   gate drive circuit   galvanic isolation   inductive wireless transfer   three-phase inverter  

摘要： When driving an IGBT in a high-voltage inverter, the gate drive circuit requires high insulation for both the control signal and the power supply circuit. Non-integrated photo couplers are often used to isolate control signal circuits, and custom-made transformers for DC-DC converters are used to isolate power supply circuits. Because the floating gate drive circuit is located on the high-voltage side, the system with non-integrated photo couplers and custom-made transformers has low reliability and complexity, therefore, there is a high demand for robust and simple isolation methods. In this paper, a highly reliable and simple isolation method that utilizes simultaneous inductive wireless transfer for both the control signal and power is proposed, and the gate drive circuit is moved to the low-voltage side for high-voltage inverters used in large industrial motors and DC power transmission converters. Using the proposed method, it is easy to access the gate drive circuit and the insulation configuration becomes robust and simple compared with conventional systems. The effectiveness of this method is verified using a 40-V prototype three-phase inverter. A three-phase motor is successfully driven using the proposed prototype.

关键词： Insulated gate bipolar transistors (IGBT)  

摘要： Effective condition monitoring (CM) technology ensures the safe operation of insulated gate bipolar transistors (IGBTs). Most CM methods for IGBTs focus on extracting electrical, thermal, and magnetic parameters. Recent studies indicate that at the switching moment, IGBTs can emit the switching stress wave (SSW) that is detectable by the acoustic emission (AE) sensors. However, using these SSWs to monitor the health status of IGBTs, even for discrete devices with relatively simple package structures, remains challenging. This paper investigates how SSWs from discrete IGBTs during power cycling change as bonding wires degrade and whether these waves are promising for monitoring the condition of internal bonding wires. In this work, a power cycle test platform and an SSW test platform for discrete IGBTs are built, and SSWs from discrete IGBTs during power cycling are analyzed. Results show that SSWs vary with the degradation of the device's bonding wires, with changes in the time domain indicator of signal energy, reflecting SSW strength, and the frequency domain indicator of the center of gravity frequency, reflecting frequency shifts. These findings suggest the possibility for developing acoustic emission-based detection technology (AEDT) in CM of the IGBT. © 2013 IEEE.

关键词： 变频器   PLC控制器   刨床控制系统  

摘要： 在B2025型龙门刨床的原设计方案中，通过电压进行调速，控制精度较差，不利于材料加工。研究基于PLC和变频器，对该型刨床控制系统进行改造，在硬件设计中，介绍了PLC、直流调速器、变频电机、变频器、减速机和旋转编码器的选型。以刨削功能为改造重点，分析了刨床自动控制程序、位置调整程序的流程。最后提出模糊自适应PID控制器的设计方案，经仿真测试，该控制系统的超调量、延迟时间等得到明显改善。