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关键词： power conversion systems   IGBT modules   junction temperature   thermal performance   thermo-sensitive electrical parameters   finite element method  

摘要： Insulated gate bipolar transistor (IGBT) is one of the most used devices for high-power-density and high-voltage applications such as wind turbines, electric vehicles, and smart grids. However, the field of IGBT research is still in its infancy owing to the failures that can happen to the module due to its temperature rise. Hence, the junction temperature Tj measurement of the active region is essential for analyzing and predicting the degradation state of the IGBT device. In this paper, an overall study, including uses of the governing thermal equation to estimate the junction temperature Tj, experimental analysis of the IGBT component during operation, and a numerical finite element (FE) study, was conducted. The thermal management FE model is conducted to predict temperature variation along time and heat spreading inside the IGBT layers. To investigate the material's properties and structure change during operation impacting the junction temperature, scanning electron microscopy (SEM) and energy X-ray dispersive spectroscopy (EDS) were performed on the IGBT power module. Results were used to interpret the difference between the experimental and the predicted temperature values. For effectiveness validation purposes, results obtained from the proposed FE model are compared with the results of the experimental thermo-sensitive electrical parameters (TSEP) method. Good agreement was found between the experiment and the proposed FE model.

关键词： 可再生能源   氢存储   动态规划   多模性  

摘要： 风能等可再生能源的间歇性导致的风电并网消纳问题成为构建新型电力系统的难题之一.风能储氢发电一体化系统可以很好地借助氢能的生产和存储来增加风力发电系统的灵活性,提高可再生能源的利用效率.本文构建了一个随机库存模型,以解决风能储氢发电一体化系统在运营管理中所涉及的生产、存储和能源转换等决策问题.针对此模型,本文证明了其最优成本函数具有“多模性”,这是一种与存储耦合的可再生能源发电系统的能源效率相适应的结构性质.基于互补性分析方法,本文刻画了风能储氢发电一体化系统的最优风能分配策略和最优电-氢能源互补策略,并分析了这些策略相对于系统状态参数的敏感性.研究结果表明,电-氢能源转换可以极大地提高风能储氢发电一体化系统的能源利用效率,降低总体运营成本.

关键词： 永磁同步电机   自抗扰控制   分数阶   粒子群算法  

摘要： 为有效抑制永磁同步电机控制系统中时变负载、参数变化以及高频测量噪声等多源不确定性扰动对系统控制性能的影响，提出了一种基于ADRC的永磁同步电机直接转矩控制方法。利用自抗扰控制不完全依赖于系统精确数学模型的优势，设计了转速环线性扩张状态观测器，对系统综合扰动进行在线估计与补偿。同时，设计了分数阶状态反馈控制器，并利用粒子群算法优化控制器参数，实现了永磁同步电机直接转矩控制。仿真结果表明，该控制策略在永磁同步电机系统中表现出良好的快速性和鲁棒性。

关键词： 未知扰动   不可测状态   最优控制   非严格反馈系统  

摘要： 本文针对具有未知扰动和不可测状态的非严格反馈系统的优化控制问题，提出了一种自适应反步优化控制策略。首先，构建了一个复合观测器，用以同时估计系统的未知状态和扰动。随后，在每一步的反步法设计中引入了包含扰动估计的非二次型代价函数，并设计虚拟最优控制器及最终的实际优化控制器，确保系统在实现控制优化的同时保持稳定性。在最优反步法的设计中，仅引入单一的评价网络，从而简化了控制器设计过程，降低了控制系统的复杂性。最终，通过李雅普诺夫稳定性分析证明了闭环系统的稳定性，并通过数值仿真验证了所提出方法的有效性。

关键词： external operation parameters   insulated gate bipolar transistors (IGBTs)   junction temperature estimation   long short-term memory (LSTM)   sliding window estimation  

摘要： The insulated gate bipolar transistor (IGBT) is one of the most important power semiconductor devices in power electronics and is also prone to failure. High junction temperature and junction temperature fluctuation of IGBT are the main causes of IGBT module aging failure. The high-precision monitoring of the junction temperature of the IGBT module is a prerequisite for IGBT life prediction, which is crucial for reducing maintenance costs and improving equipment reliability. Therefore, an IGBT junction temperature estimation method based on long short-term memory (LSTM) neural network and sliding window estimation model is proposed and applied in practical industrial scenarios. This method uses the operating data of the motor drive device in the actual industrial application scenario as the training and test data set and uses the external operating parameters of the IGBT module to estimate the junction temperature of the IGBT module. Compared with the internal operating parameters of the IGBT module based on switching transient, the external operating parameters are easier to collect and process, and more suitable for practical application scenes. A sliding window estimation model is proposed to estimate the junction temperature of the IGBT module. Compared with the point-to-point estimation method, the sliding window estimation method can capture the influence of historical operation data better and has a higher capability of time series data estimation. The IGBT junction temperature estimation of sliding windows is realized by the LSTM neural network, which is more suitable for time series estimation in real industrial scenarios. The experimental results show that the estimation accuracy of the sliding window estimation method is better than that of the point-to-point estimation method, and the accuracy of the sliding window estimation method based on LSTM is better than that of the sliding window estimation method based on other machine learning models. It proves

关键词： IGBT   状态检测   检测技术   劣化机理   应力  

摘要： 绝缘栅双极晶体管(insulated gate bipolar transistor，IGBT)是柔性直流输电技术的核心电能变换部件，其可靠性对于柔性直流输电系统安全稳定运行至关重要。基于传感器技术的IGBT器件状态检测方法，可以提高IGBT的运行可靠性，降低器件失效故障带来的经济损失。首先，探讨焊接型IGBT和压接型IGBT的劣化机理和主要故障模式异同点。然后，根据IGBT的不同封装形式，分别从嵌入式检测和非接触式检测两个方面详细综述基于温度、电流、应力波和应力应变等物理量的IGBT状态检测方法研究现状。基于研究现状，对现有研究的难点与不足进行总结，并展望IGBT器件状态检测技术的未来研究方向。

关键词： Insulated gate bipolar transistors  

摘要： Presents corrections to the paper, (Corrections to “Diamond-on-Si IGBT With Ultrahigh Breakdown Voltage and On-State Current”).

关键词： silicon carbide   IGBT   EMI noise   on-state voltage (VON)   dIC/dt controllability  

摘要： A novel 4H-SiC insulated-gate bipolar transistor (IGBT) with an N-barrier layer (NBL) at the top side of the P-shield region is proposed. During the turn-on transient, compared with the conventional grounded asymmetric P-shield trench (GASY) IGBT, the NBL IGBT has lower turn-on dIC/dt and peak turn-on current (Isurge) due to the introduction of the N-barrier layer. Consequently, the NBL IGBT has lower electromagnetic interference noise based on good turn-on dV/dt controllability. The simulation results show that the reverse recovery dVKA/dt (VKA is the cathode-anode voltage between the freewheeling diode (FWD), as shown in Fig. 1) of the FWD of the NBL IGBT is 54.6% lower than that of the GASY IGBT for the same turn-on loss (EON). In the on-state, compared with the GASY IGBT, the NBL IGBT has one more channel, and the N-barrier layer also blocks part of the holes. Thus, the conductivity modulation effect can be enhanced and the on-state voltage (VON) can be reduced. The simulation results show that VON of the NBL IGBT is 14.4% lower than that of the GASY IGBT at 30 A on-state current. In addition, the proposed IGBT has no additional complex structure, so it is simple to manufacture and does not increase the production cost.

关键词： power semiconductor   displacement current   poly-Si resistivity   self-turn-on failure   IGBT   CSTBT, carrier stored trench IGBT   split-gate  

摘要： Scaled insulated gate bipolar transistors (IGBTs) show improvement in electrical performance, but their lower gate threshold voltage (Vge(th)) causes self-turn-on issues during high dVce/dt or dic/dt switching conditions. In this study, we examine a carrier stored trench bipolar transistor (CSTBT) with a split-gate design to address the self-turn-on issue in scaled IGBTs. The split-gate configuration, which reduces Miller capacitance, helps to overcome self-turn-on failures of scaled split-gate CSTBT;however, the issue remains when considering the resistivity of poly-Si in the split-gates into account. To address this, we propose a selective-split-gate CSTBT design that resolves self-turn-on problems, even when poly-Si resistivity is considered. TCAD (Technology Computer Aided Design) simulations show that the proposed design is very effective in preventing self-turn-on and improves Vce(sat) by 24% compared to the scaled split-gate CSTBT.

关键词： 变频器   选型计算   分类   原则  

摘要： 随着工业自动化程度的不断提高,变频器在电机调速控制领域得到了广泛的应用。正确选择合适的变频器对于提高系统的性能、可靠性和节能效果至关重要。然而,变频器的选型涉及到多个因素,如负载特性、电机参数、工作环境等,需要进行详细的分析和计算。本文旨在深入研究变频器的选型计算方法,为工程技术人员提供专业的指导和参考。