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关键词： Insulated gate bipolar transistors   Estimation   Transient analysis   Integrated circuit modeling   Switches   Behavioral sciences   Employee welfare   Double pulse test (DPT)   feature fusion   graph convolutional network (GCN)   insulated-gate bipolar transistor (IGBT)  

摘要： The dynamic electrical characteristics of insulated-gate bipolar transistor (IGBT) are of great significance in practical high-power electrical applications and are usually evaluated through double pulse test (DPT). However, DPTs of IGBTs under various working conditions are time-consuming and laborious. Traditional estimation methods are based on detailed physical parameters and complex formula calculations, making deployment process challenging. This article proposes a novel DPT efficiency enhancement method based on graph convolution network (GCN) and feature fusion technology, which can estimate and supplement switching transient waveforms of all working conditions. Thereby, dynamic electrical characteristics of the IGBT are obtained by estimated waveforms of DPT. This method proposes a multimodal attention fusion network to capture and fuse the features of switching transient waveforms between different positions thereby improving the expressive power and performance of the model. Moreover, this method is novel in that it is the first to utilize GCN to embed DPT data under multiple working conditions into a graph structure, which can use the graph structure information to fuse the features of spatially correlated working conditions data to obtain reliable estimation results. The method has been verified to be effective and accurate on real dataset collected on two batches of IGBTs.

关键词： Logic gates   Buried n-layer   common-mode (CM) noise   dummy gate (DG)   electromagnetic interference (EMI) noise   gate-collector capacitance (C-GC)   ON-state voltage drop (V (CEON))   reverse recovery dV (AK)/dt   trench insulated-gate bipolar transistor (TIGBT)   turn-off loss (E-off)   turn-on loss (E-on)   trench insulated-gate bipolar transistor (TIGBT)  

摘要： A novel optimized trench insulated-gate bipolar transistor (TIGBT) with dummy gate and buried n-type carrier stored layer (DGBN-TIGBT) is proposed and investigated in this article. The heavily doped buried n-layer embedded in the p-body region of the proposed device not only enhances the conductivity modulation in the drift region without producing a negative impact on the breakdown voltage (BV) but also forms a self-adaptive hole path through the integrated pMOS with the dummy gate (DG). Moreover, the lower p-type region is connected to the emitter via the pMOS adaptively during the switching transient, which reduces the gate-collector capacitance (C-GC) and mitigates the accumulation of holes near the corner and bottom of the gate trench. This enables lower power loss and suppressed electromagnetic interference (EMI) noise. Simulation results show that compared with the conventional carrier stored trench bipolar transistor (CSTBT), the ON-state voltage drop (V (CEON)) at a current density of 200 A/cm(2) is reduced by 24.2% and C-GC at V (CE) of 25 V is reduced by 42.6%, respectively. The turn-off loss (E-off) is also reduced by 60.9% with the same V-CEON of 0.97 V Furthermore, the reverse recovery dV (AK)/dt of the freewheeling diode (FWD) is dropped by 23.6% with the same turn-on loss (E-on) of 14 mJ/cm(2). Therefore, the common-mode (CM) noise can be reduced up to 12.9 dB & sdot;mu V for the proposed device in the frequency range of 40-100 MHz.

关键词： IGBT modules   thermal impedance model   fractional-order   parameter identification  

摘要： The thermal impedance characteristics of insulated gate bipolar transistor (IGBT) modules are critical for the thermal management and design of electronic devices. This paper proposes a fractional-order equivalent thermal impedance model, which is inspired by the correlation between multi-time-scale dissipation characteristics of heat conduction processes and fractional calculus. The fractional-order equivalent thermal impedance model is derived based on the connection between fractional-order calculus and the Foster thermal network model in mathematical operations, with only two parameters to be identified: heat capacity C and fractional order alpha. Moreover, this paper provides a parameter identification method for the proposed fractional-order equivalent thermal impedance model based on the multi-objective particle swarm optimization (MOPSO) algorithm. In order to validate the effectiveness and superiority of this work, experiments and comparative works are provided in this paper. The results indicate that the fractional-order equivalent thermal impedance model can accurately describe the frequency domain characteristic curves of the thermal impedance of the Foster thermal network model for IGBT modules, with the difference between the amplitude frequency characteristics not exceeding 1 dB and the difference between the phase frequency characteristics not exceeding 1 degrees within the operating frequency range of (1 kHz, 1 MHz).

关键词： silicon carbide (SiC)   silicon (Si)   Hybrid Power Switch   IGBT   MOSFET  

摘要： Hybrid Power Switches (HPS) combine the advantages of SiC unipolar and Si bipolar devices and therefore can bridge the gap between these technologies. In this paper, the performance of a hybrid power switch configuration based on the latest SiC MOSFET and Si IGBT technologies is presented. The device is evaluated through experimental measurements of its characteristics under various conditions. The results show the HPS can achieve switching losses as low as a SiC MOSFET while offering the high current capability of the IGBT without significant increase in costs.

关键词： Thin film deposition   Pulse-power   IGBT  

摘要： A modulated pulse-power magnetron sputtering system (MPPMS) was commissioned and used to deposit niobium on copper. MPPMS utilizes a modulated pulse train with high peak-to-average energy ratios, thereby increasing the energy density leading to the production of the energetic ions. The MPPMS modulator was designed and constructed based on large voltage/current IGBT modules, which can be externally modulated, produce bi-polar waveforms, and are readily available. A high voltage power supply provides moderate current to the IGBT module to create the precise pulse structure. The MPPMS system was used to deposit-1 mu m thick, niobium film on a copper substrate held at-77 K to minimize Nb atom surface diffusion and maximize intrinsic film energy. The Nb film had an average grain size of-8 nm.

关键词： Insulated gate bipolar transistors (IGBT)   Heavy copper wires   micro-alloyed   Chlorination   High-temperature oxidation   Power cycling  

摘要： In this study, we introduced trace amounts of silver and nickel into 500 mu m diameter copper wires to form micro-alloyed copper wires used in insulated gate bipolar transistors (IGBT). The addition of silver and nickel enhanced the mechanical properties of the conductors and suppressed the work hardening effect, significantly improving the power cyclic lifetime. Additionally, this study conducted chlorination and high-temperature oxidation test to compare the application characteristics of the heavy micro-alloyed copper wires with pure copper wires, through tensile and bending test, as well as electrical property comparisons. Finally, Cu50Ni (50 ppm Ni) wires were selected and nickel ceramic substrates for wire bonding to evaluate module electrical properties and bonding reliability. In the chloride test, there was no significant pitting corrosion observed in copper wire, and the micro-alloyed copper wire outperformed the pure copper wires in terms of bending lifetime and power cycling performance. In the high-temperature oxidation test, an oxide layer of cuprous oxide formed on the surface of all wires. The pure copper wire exhibited a significant increase in resistance. Notably, the micro-alloyed copper wires had better resistance to oxidation. Regarding wire bonding, the use of Cu50Ni wires and nickel ceramic substrates reduced the diffusion rate of nickel atoms from the substrate to the copper wire, forming a thinner alloy diffusion layer. This prevented electrical degradation and achieved high bonding reliability, especially under higher bonding forces. These findings confirm that micro-alloyed copper wires are suitable for high-power applications.

关键词： Insulated gate bipolar transistors   Market research   Uncertainty   Predictive models   Degradation   Prediction algorithms   Accuracy   High-speed train   model-based method   multialgorithm   multivariability   performance degradation parameter (PDP)   power insulated gate bipolar transistor (IGBT) module   remaining useful life (RUL) prediction  

摘要： Accurately predicting the remaining useful life (RUL) of power insulated gate bipolar transistor (IGBT) modules is crucial for high-speed trains. Challenges under actual train operations, including significant uncertainty, multivariability, and insufficient full-lifecycle datasets of performance degradation parameters (PDPs), hinder the accurate RUL prediction. Thus, a hybrid RUL prediction approach is proposed. To address the significant uncertainty in PDP, variational mode decomposition (VMD) is utilized to segregate low-frequency trend information from the high-frequency uncertainty information, enabling distinct prediction approaches for diverse data. Besides, kernel density estimation-bidirectional long short-term memory network (KDE-BiLSTM) is proposed to precisely quantify and forecast the significant uncertainty information. Moreover, to tackle the multivariability of PDP, a Wiener-based transferable trend information modeling technique is introduced. Furthermore, to predict PDP trends with insufficient datasets, a model-based method employing regularized particle filter-RIME-least squares support vector machine (RPF-RIME-LSSVM) is proposed for trend information prediction. RIME-LSSVM solves the missing observation problem in the RPF prediction phase. Ultimately, the integration of the trend and uncertainty information yields the final RUL prediction. The proposed method was validated utilizing Infineon 6500 V/750 A IGBT modules. The maximum RUL prediction error was 9000 cycles, validating the method's effectiveness. The prediction error of at least 7000 cycles below the baseline models demonstrated the method's superiority.

关键词： Heating systems   Junctions   High-voltage techniques   Leakage currents   Insulated gate bipolar transistors   Temperature measurement   Multichip modules   6.5 kV   high temperature reverse bias (HTRB)   high-voltage high-temperature high-humidity reverse bias (HV-H3TRB)   high-voltage power IGBT modules   railway   self-heating   thermal runaway  

摘要： In this article, a temperature stabilization method of high-temperature reverse bias (HTRB) and high-voltage high-temperature high-humidity reverse bias (HV-H3TRB) tests for 6.5 kV high-voltage power IGBT modules used in railway is proposed. The traditional climate chamber is not suitable for stabilizing the temperature of high-voltage IGBT modules, as there are multi-chips connected in parallel, which can create a high leakage current during the high-voltage blocking state at high junction temperature. The proposed junction temperature stabilization method can avoid thermal runaway caused by positive feedback between power loss and junction temperature in HTRB and HV-H3TRB tests, and the effectiveness is confirmed by experimental results. Furthermore, a precise junction temperature measurement method based on leakage current is proposed, which can be used to set initial junction temperature correctly for HTRB and HV-H3TRB tests.

关键词： DC power transmission   semiconductor devices  

摘要： The lack of an MMC reliability evaluation approach that incorporates data on essential components' health monitoring in the already related research prevents reliability from being further improved. Therefore, this article proposes a real-time reliability evaluation method of the multi-state IGBT module in MMC through iterative calculation of the Markov chain model. The degradation process of the IGBT module is divided into multiple states based on the monitored bond wire failure, and the failure rate of the IGBT module is updated in real time using the accumulated monitoring data of junction temperature. The proposed method can more accurately reflect the real state of MMC compared with the binary state evaluation method. Besides, a multi-channel high-speed data acquisition board is designed to measuring the gate voltage and collector voltage of the IGBT for the health evaluation of IGBT modules in MMC;the typically measured results validate the effectiveness of the data acquisition board.

关键词： Trench IGBT   Single-event burnout (SEB)   Technology computer-aided design (TCAD)   Heavy ion   Inherent parasitic transistor  

摘要： In this paper, based on TCAD simulation, a detailed investigation of the SEB failure mechanism of trench IGBTs featuring a deep trench with slanted side-walls structure is conducted for the first time by studying the temporal evolution of electrostatic potential, impact ionization, electric field, current density, and hole concentration distributions. The study reveals that heavy ion irradiation can induce the turning-on of inherent parasitic transistors, leading to the formation of latch-up and consequently SEB. Firstly, the peak electric field transfer leads to high-level impact ionization at the homojunction, injecting ionized electrons into the base-neutral region to turn on the parasitic PNP transistor. Secondly, ionized holes flow through the P-well towards the emitter, diminishing the potential barrier between the P-well and the N+ source region, thus activating the parasitic NPN transistor. Finally, with the parasitic NPN transistor remaining forward-biased, it continuously supplies electron current to the parasitic PNP transistor, thereby sustaining its operation. In summary, the conclusions obtained from the study can provide important references for a deeper understanding of the failure mechanisms of trench IGBT devices in harsh radiation environments.