课程文献中心 更多>>

关键词： PP-IGBT module   power cycling test   thermal resistance   life prediction  

摘要： The contact interfaces of a press-pack insulated-gate bipolar transistor (PP-IGBT) module under fluctuating thermal stress will undergo minor friction and mutual sliding during service, which results in damage to the contact surface and a decline in the thermal performance of the contact interface. Therefore, the temperature inside the module will continue to increase, leading to eventual failure. In this work, a life prediction method based on thermal resistance degradation within a PP-IGBT module is established. The junction temperature can be determined via power loss and a resistance-capacitance (RC) thermal network model, and a life prediction model of the PP-IGBT module is developed based on thermal resistance degradation. The method considers the service quality under power cycling conditions and the influence of the self-accelerating effect of damage accumulation at the contact interface of the PP-IGBT module on fatigue life. The experimental results verify that the proposed PP-IGBT module life prediction method can effectively predict service life under power cycling conditions.

关键词： Chip scale packages  

摘要： Due to the inherent parasitic inductances in power devices caused by chip packaging and circuit design, issues such as gate signal oscillations and increased electrical stresses frequently occur. While complete elimination of parasitic inductance remains impractical, effective utilization of the energy stored in these inductances offers a more viable approach to controlling power device switching transients. This paper presents a comprehensive parasitic inductance model for power devices and packaging using a distributed parameter coupling extraction method. The energy interactions within parasitic inductors are analyzed through an instantaneous energy integration approach. Novel energy transfer branches are proposed to facilitate both energy transfer across parasitic inductors and the shunting of displacement currents induced by dvce/dt enabling independent control of voltage and current slopes. This technique achieves simultaneous optimization of switching losses and electrical stresses without requiring high-cost components. Experimental validation is conducted using IGBT device IKW75N60T in a double-pulse test setup, demonstrating significant performance improvements: 12.0% reduction in current overshoot, 14.5% reduction in voltage overshoot, along with 4.16% and 7.6% reductions in turn-on and turn-off losses respectively. The proposed method provides an effective solution for managing switching transients while maintaining cost efficiency in power electronic systems. ©2025 *** ***.

关键词： IGBT   thin-film thermocouple   chip temperature measurement field   switching frequency   duty cycle  

摘要： In the new energy electric drive system, the thermal stability of IGBT, a core power device, significantly impacts the system's overall performance. Accurate IGBT temperature measurement is crucial, but traditional methods face limitations in IGBT's compact working space. Thin-film thermocouples, with their thin and light features, offer a new solution. In this study, Ni 90% Cr 10% and Ni 97% Si 3% thin-film thermocouples were prepared on polyimide substrates via magnetron sputtering. After calibration, the Seebeck coefficient of the thin-film thermocouple temperature sensors reached 40.23 mu V/degrees C, and the repeatability error stabilized at about 0.3% as the temperature rose, showing good stability. Researchers studied factors affecting IGBT temperature. Thin-film thermocouples can accurately monitor IGBT module surface temperature under different conditions. Compared to K-type wire thermocouples, they measure slightly higher temperatures. As the control signal's switching frequency increases, IGBT temperature first rises then falls;as the duty cycle increases, the temperature keeps rising. This is consistent with RAC's junction temperature prediction theory, validating the feasibility of thin-film thermocouples for IGBT chip temperature measurement. Thin-film thermocouples have great application potential in power device temperature measurement and may be a key research direction, supporting the optimization and upgrading of new energy electric drive systems.

关键词： insulated gate bipolar transistor (IGBT)   gate driver   monolithic integration  

摘要： This paper presents a smart monolithic integrated IGBT gate driver integrated circuit (IC) which is suitable for the control of 3-phase inverter and power factor correction (PFC). The chip integrates seven channels on a single chip, comprising three high-side and three low-side channels for the control of 3-phase inverter section, and one low-side PFC channel for the control of PFC section. By providing the undervoltage protection (UV), overcurrent protection (OC), and fault logic control, abnormal functionality caused by accidents is suppressed to prevent the power inverter system from failing or malfunctioning. The chip is designed and fabricated using a 600 V 1.0 pm high voltage Bipolar-CMOS-DMOS (BCD) process, in order to achieve high and low voltage circuits monolithic integration, and occupies a core area of only 3500 pm x 2400 pm. Experimental results validated the functionality of the chip. Compared to conventional solutions, this chip has more functions and higher integration, which deliver a complete power stage solution for high performance and cost-effective applications.

关键词： Capacitance   Insulated gate bipolar transistors   Inductors   Impedance measurement   Resonant frequency   Junctions   Capacitance measurement   Impedance   Electromagnetic interference   Resonance   Electromagnetic interference (EMI)   insulated-gate bipolar transistor (IGBT) modules   parasitic parameters  

摘要： Half-bridge insulated-gate bipolar transistor (IGBT) modules are widely used in power electronic devices, and the high-speed switching of IGBTs in the modules can cause serious electromagnetic interference (EMI) through parasitic common mode (CM) capacitances in modules. Therefore, accurately extracting the parasitic CM capacitances of IGBT modules is significant for modeling and evaluating the EMI of power electronic equipment. Considering that the original extraction based on the resonance of the external inductor is affected by using asymmetric terminal measurements, this letter proposes an improved extraction method for parasitic CM capacitances of IGBT modules. The calculation method for parasitic CM capacitances of IGBT modules based on impedance measurement is presented. The impact of nonlinearity in junction capacitances during impedance measurements is greatly eliminated. The improved method is validated through measurements.

摘要： The Electronics Editorial Office retracts the article “Effects of Current Filaments on IGBT Avalanche Robustness: A Simulation Study” [1], cited above.

关键词： 电驱系统   IGBT   COMSOL   散热   仿真   水道  

摘要： 随着新能源汽车电驱动系统的发展,绝缘栅双极型晶体管IGBT模块作为核心部件,其散热问题成为制约电驱动系统可靠性的瓶颈。文章通过COMSOL Multiphysics软件对灌封型IGBT模块及其散热系统进行全面热仿真,并结合试验数据进行对比分析,优化水道设计以提高散热效率。研究结果表明,优化后的水道设计能有效降低IGBT模块的温度,提高系统的可靠性。

关键词： 车载充电机   CLLC谐振变换器   软启动   变频控制   移相控制  

摘要： 目的解决两级式车载充电机后级CLLC谐振变换器输出滤波电容在启动时使电路中产生较大冲击电流的问题.方法对传统的降频软启动和移相软启动控制策略在消除启动过程产生的冲击电流的不足进行分析,研究变换器在变频控制下的增益特性曲线,以及移相控制输出电压和有效占空比的非线性关系,提出一种先移相后降频的改进软启动策略.结果仿真结果表明,改进的软启动策略消除了降频软启动策略启动瞬间存在的电流尖峰,抑制了移相软启动策略启动过程中存在的电流过冲.结论改进的软启动策略结合了两种传统软启动策略的优点,能更好地消除启动过程中产生的冲击电流,启动效果更佳.

关键词： Loop thermosyphon   Vertical flat plate evaporator   Filling ratio   Heat load   Instability  

摘要： As a key component of new energy conversion systems and high voltage power supply switching devices, effective heat dissipation will greatly improve its service life and operational stability. Loop thermosyphon is an efficient two-phase heat transfer device. It has no internal moving parts, consumes no external energy, and can transfer heat over long distances. These advantages enable it to solve the IGBT heat dissipation problem. However, the research on the application of loop thermosyphon to vertical working IGBTs, which requires the arrangement of vertical flat evaporators and high-temperature uniformity, is not sufficient. In this paper, a loop thermosyphon with a vertical flat evaporator is designed and tested. Thus, various important influencing factors, such as filling ratios (31 %-87 %), heat loads (100 W-900 W), and cooling water temperatures (10 degrees C-40 degrees C), on the heat transfer capacity of the loop thermosyphon and temperature uniformity of the evaporator were studied. The experimental results show that the optimal filling ratio is 52 %, which is the result of combining the maximum temperature and temperature uniformity of the evaporator substrate. When Q = 500 w, the maximum temperature (Te1 = 52 degrees C) remains unchanged between 37 % and 52 %. Increasing the filling ratio can improve the temperature uniformity. At the same time, when Q = 600 W, the top of the evaporator appears to have a dry- up phenomenon, which is the main reason for the deterioration of temperature uniformity. Increasing the filling ratio or decreasing the heat load can effectively solve this problem. Meanwhile, through the internal pressure and mass flow rate changes of the system, the variation law of mass flow rate under different experimental conditions is summarized. In addition, the instability of loop thermosyphon under different heat loads and different cooling water temperatures is analyzed.

关键词： 反源问题   Wentzell边界条件   最优控制   散度定理  

摘要： 该文主要研究以Wentzell边界条件为背景,利用终端温度测量值在抛物热传导方程中重构与空间相关源项的反问题,这一研究在热传导工程问题中经常出现.该研究的难点是对Wentzell边界条件的处理,通过应用散度定理使得边界条件可以与抛物方程相结合,而在不同的边界条件下,极值原理的证明也有所区别.由于原问题的不适定性,基于最优控制理论的框架,对原问题进行优化,建立了正则化解的存在性和所满足的必要条件,并且在极值原理成立的情形下,证明了正则化解的唯一性和稳定性.