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关键词： Current sharing among IGBT cells   dynamic avalanche   press-pack insulated gate bipolar transistor (PP IGBT) chip   pressure distribution  

摘要： Within a press-pack insulated gate bipolar transistor (PP IGBT) submodule, the components are packaged by external clamping force. This external clamping force significantly affects the chip's dynamic avalanche and further degrades its turn-off capability, which needs to be investigated. In this article, it is found for the first time that the pressure distribution is the key factor for the IGBT chip's dynamic avalanche during a single turn-off period. Simulation results indicate that the maximum pressure difference on the chip surface rises by 1.5 times when the clamping force increases from 1 to 2.5 kN. During turn-off, that pressure distribution leads to a 21.21% increase in the maximum current density inside the single chip, which strengthens the dynamic avalanche. To verify this mechanism, the turn-off waveforms of a single chip under different forces are then measured and compared in detail. Meanwhile, these conclusions regarding the pressure distribution effect are applicable to the single chip inside the multichip device in practical applications. Moreover, suggestions for the packaging design and practical operation are put forward to improve the PP IGBT device's turn-off capability effectively.

摘要： Motor drives play a crucial role in performing numerous daily tasks of human life. The gate driver circuit, an essential part of motor drives, serves as the interface between the switching devices, such as the insulated gate bipolar transistor (IGBT), and the motor-drive controller. The general approach to operating the IGBT involves using a bipolar power supply, where a sufficient negative voltage is applied to the gate-to-emitter terminals of the IGBT during turn-off. Nevertheless, the recent trend leans towards applying zero volts between the gate and emitter terminals when the device is turned off. This method is known as "unipolar supply" for gate drivers, typically applicable for low-power motor drives with a nominal current of less than 100 A. This absence of a negative voltage supply reduces the cost of power supplies and printed circuit board (PCB) footprint. Despite these advantages, it increases the risk of parasitic turn-on, which raises the gate-emitter voltage of the complementary IGBT in a half-bridge configuration. If it exceeds the threshold voltage of the IGBT, it may cause a shoot-through across the DC-link of a motor drive. This thesis discusses several techniques to prevent such parasitic turn-on events, and these are tested on a double pulse test setup. Specific characteristics of IGBT modules that favour unipolar supply gate drivers are identified, relating to their construction. A simulation model is developed in LTSpice, enabling the observation of interferences caused by switching transients. As developing accurate simulation models that comply with all natural phenomena in semiconductors is challenging, a real-world test setup is necessary to obtain accurate results. Due to the rapid transient nature of switching events, noises arise from the circuit. Therefore, the necessary considerations for building such a test setup are stated to correctly identify and capture the quantities of interest (currents and voltages). The analysis prim

关键词： aging monitoring   IGBT   solder layer   transfer function   void fraction  

摘要： This paper proposes a method based on transfer function to monitor the solder layer void damage in IGBT modules. Firstly, the thermal resistance of each layer structure of IGBT module and the Cauer model is analyzed. Secondly, the process of obtaining the parameters of Cauer model by transfer function is analyzed. Finally, the thermal resistance of the IGBT module under different void fractions of the solder layer is measured by experiments, which obtains the relationship between the thermal resistance difference and the void fractions. In addition, this method is compared with the monitoring method by IEC standard, which verifies the accuracy and feasibility of this method.

关键词： Insulated gate bipolar transistors   Solid modeling   Observers   Temperature sensors   Monitoring   Finite element analysis   Thermal analysis  

摘要： Dynamic temperature monitoring at critical locations of IGBT modules is a key means to improve the reliability of high-power converters. However, most existing thermal model-based methods suffer from temperature estimation errors due to model parameter variations and loss calculation errors. To address this problem, based on the reduced-order thermal model, an $H_{\infty}$ observer-based robust 3-D thermal monitoring method for IGBT modules is proposed in this paper. Through the optimized design of the observer feedback gain, the thermal model and real-time temperature information are effectively combined, which reduces the temperature estimation error in the worst case. Thus, the proposed method is more robust to model parameter uncertainty and loss error than the conventional temperature observers. Experiment validations of the proposed $H_{\infty}$ observer and conventional observers are provided. The results demonstrate that the proposed observer achieves the highest temperature estimation accuracy under various system uncertainties, making it an effective solution for reliable online thermal monitoring of IGBT modules over the whole life cycle.

关键词： QD6600系列   变频器   元器件   模块化   性能   设计  

摘要： 本文介绍的QD6600 系列变频器在风机、水泵负载中使用广泛,对风机、水泵生产率的提高作用明显.通过设计分析得知,QD6600 系列变频器内部结构由直流电抗器、滤波器、电路板、功率模块、传感器、显示器先进元器件等组成,软件系统采用的是模块化设计,核心控制算法、通讯功能以及监控功能等均由模块化设计的程序来完成.在性能方面,QD6600 系列变频器具备强大过载能力、适宜降容参数、高转矩输出参数、高精度转矩控制能力及高响应性能等.此外,通过实际应用得知,QD6600系列变频器对风机、水泵的自动控制能力提升、可靠性提高、节能降耗方面均表现优异.

关键词： 变频器   优化   提效  

摘要： 本文以青岛万宝压缩机有限公司家用冰箱变频器QH05A为载体,通过分析变频器中主要发热元器件共模电感、热敏电阻、IGBT的工作原理及功率损耗,并和元器件厂家合作,实现对共模电感、热敏电阻的优化以及对IGBT和MOSFET的替换,从而实现对变频器整体方案的效率的提高,使变频器效率在原方案的基础上提高1.16%,进一步提高了产品的竞争力.

摘要： Nowadays, Power Electronics is paying greater attention to the rapid advancement of power semiconductor devices. This paper examines the quantitative analysis of the Direct Matrix Converter using both MOSFET and IGBT for high efficiency converters. As a result, the IGBT has a substantially lower switching loss than the MOSFET. Additionally, switching loss for MOSFETs will significantly increase at high operating temperatures, whereas switching loss for IGBTs hardly varies with temperature. In this paper, by comparing switching power loss, temperature, volume, weight requirements, power quality, efficiency, and static characteristics, the performance of IGBT and MOSFET is assessed. It has been concluded through a comparison of the device parameters that IGBTs outperforms MOSFETs in terms of smaller loss, greater efficiency, and smaller size.

关键词： 功率模块   电动汽车   IGBT功率模块   杂散电感   热阻  

摘要： 提高车规级功率模块的功率密度对电动汽车的性能具有重要意义,而传统功率模块内部采用的二维布局杂散电感大,限制了开关速度与母线电压,影响功率密度的提高。为此,以EconoDUAL封装的IGBT功率模块为对象,使用叠层DBC的方法进行三维布局设计,开发出了1200 V/1200 A的IGBT功率模块;详细介绍了所提功率模块的布局结构,与传统二维布局方法相比,杂散电感下降了58%;同时,对功率模块进行电气性能测试,通过了母线电压800 V下脉冲电流为1200 A的双脉冲实验,证明了模块功率密度的提高。为了在提高功率密度的情况下不影响散热性能,功率模块底部使用了水冷PinFin散热器,并对其进行了散热仿真和结-水热阻的测试,结果表明,IGBT热阻为0.084 K/W,二极管热阻为0.124 K/W,与同封装下商用1200 V/900 A模块相比并无明显差异,证明了所提设计方法的正确性及有效性。

关键词： 智轨电车   虚拟联挂   最优控制   车车通信   安全制动模型   多目标控制  

摘要： 潮汐客流、瞬时大客流和共线运行等场景要求智轨电车增加编组以提升载客量,然而传统机械式物理编组操作繁琐、无法灵活调节。为此,文章提出一种基于车辆安全制动模型并考虑多控制目标的智轨虚拟联挂系统架构,研究其安全制动模型与协同控制模型,并通过设计协同规划目标函数与约束条件,实时计算出跟随车保持最小安全间距条件下的速度、加速度和牵引/制动力百分比。仿真及实车试验结果显示,当智轨虚拟编组运行车速达45 km/h时,编组车辆间距小于5 m、到站时间差小于3 s、前后车停车时间差小于0.5 s以及跟随车冲击率不超过0.4 m/s^(3),牵引与制动工况切换平稳,能有效实现编组准时、精准、舒适和节能运行。该技术为后续智轨虚拟联挂编组批量应用奠定了坚实的基础。